BTD1858I3

BTD1858I3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 1/7 BTD1858I3 CYStek Product Specification Silicon NPN Epitaxial Planar Transistor BTD1858I3

Description

• High BVCEO
• High current capability
• Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S B：Base C：Collector E：Emitter B C E B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 180 V Collector-Emitter V oltage VCEO 160 V Emitter-Base V oltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) ICP 3 (Note) A Power Dissipation @TA=25℃ PD 1 W Power Dissipation @TC=25℃ PD 15 W Thermal Resistance, Junction to Ambient RθJA 125 °C/W Thermal Resistance, Junction to Case RθJC 8.33 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse , Pw≦380μs,Duty≦2%.

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 2/7 BTD1858I3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 180 - - V IC=50µA, IE=0 BVCEO 160 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=50µA, IC=0 ICBO - - 1 µA VCB=160V , IE=0 IEBO - - 1 µA VEB=4V , IC=0 *VCE(sat) - 0.15 0.3 V IC=1A, IB=100mA *VCE(sat) - - 0.4 V IC=1A, IB=50mA *VBE(on) - - 0.8 V VCE=5V , IC=5mA hFE1 180 - 560 - VCE=5V , IC=200mA hFE2 30 - - - VCE=5V , IC=500mA fT - 140 - MHz VCE=5V , IC=150mA Cob - 27 - pF VCB=10V , IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Q R Range 180~390 270~560

Ordering Information

Device HFE rank Package Shipping BTD1858I3-Q-UB-S Q TO-251AB (Pb-free lead plating) 80 pcs / tube, 50 tubes / box BTD1858I3-R-UB-S R TO-251AB (Pb-free lead plating) 80 pcs / tube, 50 tubes / box BTD1858I3S-Q-UB-S Q TO-251S (Pb-free lead plating) 80 pcs / tube, 50 tubes / box BTD1858I3S-R-UB-S R TO-251S (Pb-free lead plating) 80 pcs / tube, 50 tubes / box BTD1858I3-Q-UB-G Q TO-251AB (Pb-free lead plating and halogen-free package) 80 pcs / tube, 50 tubes / box BTD1858I3-R-UB-G R TO-251AB (Pb-free lead plating and halogen-free package) 80 pcs / tube, 50 tubes / box BTD1858I3S-Q-UB-G Q TO-251S (Pb-free lead plating and halogen-free package) 80 pcs / tube, 50 tubes / box BTD1858I3S-R-UB-G R TO-251S (Pb-free lead plating and halogen-free package) 80 pcs / tube, 50 tubes / box

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 3/7 BTD1858I3 CYStek Product Specification Characteristic Curves Output Characteristics 0.05 0.1 0.15 0.2 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=100uA IB=200uA IB=300uA IB=400uA IB=500uA Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=0.5mA IB=1mA IB=1.5mA IB=2mA IB=2.5mA Output Characteristics 0.2 0.4 0.6 0.8 1.2 0246 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=2mA IB=4mA IB=6mA IB=8mA IB=10mA Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=5mA IB=10mA IB=15mA IB=20mA IB=25mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=2V VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=10IB IC=20IB IC=50IB VCE(SAT) IC=30IB

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 4/7 BTD1858I3 CYStek Product Specification Characteristic Curves(Cont.) Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB On Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBE(on)@VCE=5V Output Capacitance vs Reverse Biased Voltage 100 0.1 1 10 100 Reverse Biased Voltage---VCB(V) Output capacitance---Cob(pF) Power Derating Curve 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 5/7 BTD1858I3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) 183°C 60-150 seconds − Time (tL) 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 6/7 BTD1858I3 CYStek Product Specification TO-251AB Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: DIM Min. Max. Min. Max. F 0.091 TYP 2.300 TYP N 0.118 REF 3.000 REF G 0.091 TYP 2.300 TYP S 0.197 REF 5.000 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 D1858 □ □□ Product Name Date Code: Year+MonthHFE rank Year : 1→ 2011, 2→ 2012,.., etc. Month : 1~9,A,B,C

CYStech Electronics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2012.08.21 Page No. : 7/7 BTD1858I3 CYStek Product Specification TO-251S Dimension *: Typical Notes: 1.Controlling dimension: inch. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking : Date Code: Year+Month Year : 1→ 2011, 2→ 2012,.., etc. Month : 1~9,A,B,C □ □□ D1858 Device Name HFE rank Style : Pin 1. Base 2. Collector 3. Emitter 3-Lead TO-251AA Plastic Package CYStek Package Code: I3