BTD1805AD3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Very low collector-to-emitter saturation voltage
  • Fast switching speed
  • High current gain characteristic
  • Large current capability
  • Pb-free lead plating package

Applications

  • CCFL drivers
  • V oltage regulators
  • Relay drivers
  • High efficiency low voltage switching applications Symbol Outline BTD1805AD3 B：Base C：Collector E：Emitter TO-126ML E C B

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 2/ 7 BTD1805AD3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage (IE=0) VCBO 120 V Collector-Emitter V oltage (IB=0) VCEO 60 V Emitter-Base V oltage (IC=0) VEBO 8 V Collector Current (DC) IC 5 Collector Current (Pulse) ICP 10 (Note 1) A Base Current IB 2 A Power Dissipation @ TA=25℃ PD 1.5 Power Dissipation @ TC=25℃ PD 20 W Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 120 - - V IC=100μA, IE=0 *BVCEO 60 - - V IC=1mA, IB=0 BVEBO 8 - - V IC=100μA, IC=0 ICBO - - 0.1 μA VCB=120V , IE=0 IEBO - - 0.1 μA VEB=8V , IC=0 *VCE(sat) 1 - - 50 mV IC=100mA, IB=5mA *VCE(sat) 2 - 190 250 mV IC=2A, IB=50mA *VCE(sat) 3 - 230 300 mV IC=3A, IB=150mA *VCE(sat) 4 - - 400 mV IC=5A, IB=200mA *VCE(sat) 5 - - 300 mV IC=2A, IB=20mA *VCE(sat) 6 - - 500 mV IC=2A, IB=10mA *VBE(sat) - 0.9 1 V IC=2A, IB=100mA *hFE 1 200 - 450 - VCE=2V , IC=100mA *hFE 2 120 - - - VCE=2V , IC=5A *hFE 3 40 - - - VCE=2V , IC=10A fT - 150 - MHz VCE=10V , IC=50mA Cob - 50 - pF VCB=10V , f=1MHz ton - 50 - ns tstg - 1.35 2.5 μs tf - 120 1000 ns VCC=30V , IC=10IB1=-10IB2=1A, RL=30Ω *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 3/ 7 BTD1805AD3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500u 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Emitter Grounded Output Characteristics 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=2mA 4mA 6mA 10mA 20mA Emitter Grounded Output Characteristics 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=5mA 10mA 20mA 50mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V 125°C 75°C 25°C Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=2V 125°C 75°C 25°C

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 4/ 7 BTD1805AD3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=5V 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=20IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=50IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=100IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT@IC=10IB 25°C 75°C 125°C On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBEON@VCE=2V 25°C 75°C 125°C

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 5/ 7 BTD1805AD3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage 100 1000 10000 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temeprature---TC(℃) Power Dissipation---PD(W)

Ordering Information

(Pb-free lead plating package) 200 pcs / Bag, 15 Bags/Box, 10 Boxes/Carton

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 6/ 7 BTD1805AD3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 150°C 200°C 60-120 seconds 60-180 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C821D3 Issued Date : 2006.11.23 Revised Date :2012.07.13 Page No. : 7/ 7 BTD1805AD3 CYStek Product Specification TO-126ML Dimension Marking: D1805A □□ 1 2 3 E C B Device Name Date Code: Year+Month Year: 2005→5,2006 →6, …., etc Month: Jan→1,Feb →2,…,Sep →9, Oct→A Nov→B, Dec→C Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.