BTC4081S3S CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 1/5 BTC4081S3S CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTC4081S3S

Description

  • The BTC4081S3S is designed for using in driver stage of AF amplifier and general purpose amplification.
  • Low Cob, Typ. Cob=2.0pF
  • Complementary to BTA1576S3S
  • Pb-free package Symbol Outline SOT-323 BTC4081S3S B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current IC 150 mA Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 2/5 BTC4081S3S CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100μA BVCEO 50 - - V IC=1mA BVEBO 7 - - V IE=50μA ICBO - - 0.1 μA VCB=60V IEBO - - 0.1 μA VEB=7V *VCE(sat) - 0.2 0.4 V IC=50mA, IB=5mA *hFE 180 - 560 VCE=6V, IC=1mA fT 80 180 - MHz VCE=12V, IC=2mA, f=100MHz Cob - 2 3.5 pF VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank R S Range 180-390 270-560

Ordering Information

Device Package Shipping Marking BTC4081S3S SOT-323 (Pb-free) 3000 pcs / Tape & Reel 1F

CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 3/5 BTC4081S3S CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current --- IC(mA) Current Gain---HFE HFE@VCE=6V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current --- IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current --- IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current --- IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=12V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 4/5 BTC4081S3S CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 5/5 BTC4081S3S CYStek Product Specification SOT-323 Dimension Marking: TE Style: Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 He E A Q Lp e bp D W B v A Z detail Z A C θ 01 2 scale mm *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.