BTC4062N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • High Breakdown Voltage:BVCEO≥350V
  • Complementary to BTA1722N3
  • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 350 V Collector-Emitter V oltage V CEO 350 V Emitter-Base V oltage V EBO 6 V Collector Current---continuous I C 500 mA Power Dissipation @TA=25℃ Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTC4062N3 SOT-23 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 2/5 BTC4062N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 350 - - V I C=100µA BVCEO 350 - - V I C=1mA BVEBO 6 - - V I E=10µA ICBO - - 50 nA V CB=250V IEBO - - 50 nA V EB=5V VCE(sat) 1 - - 0.3 V I C=10mA, IB=1mA VCE(sat) 2 - - 0.35 V I C=20mA, IB=2mA *VCE(sat) 3 - - 0.5 V I C=30mA, IB=3mA *VCE(sat) 4 - - 1.0 V I C=50mA, IB=5mA VBE(sat) 1 - - 0.75 V I C=10mA, IB=1mA VBE(sat) 2 - - 0.85 V I C=20mA, IB=2mA *VBE(sat) 3 - - 0.9 V I C=30mA, IB=3mA VBE(on) - - 2 V V CE=10V , IC=100mA hFE 1 20 - - - V CE=10V , IC=1mA hFE 2 30 - - - V CE=10V , IC=10mA *hFE 3 30 - 200 - V CE=10V , IC=30mA *hFE 4 20 - 200 - V CE=10V , IC=50mA *hFE 5 15 - - - V CE=10V , IC=100mA fT 40 - 200 MHz V CE=20V , IC=10mA, f=20MHz Cob - - 6 pF V CB=20V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking BTC4062N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 1Z

CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 3/5 BTC4062N3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE HFE@VCE=10V 25℃ 75℃ 125℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 25℃ 75℃ 125℃ VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current IC-(mA) Saturation Voltage-(mV) 25℃ 75℃ 125℃ VCE(SAT)@IC=10IB Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃ ) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 4/5 BTC4062N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 5/5 BTC4062N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3