BTC3838N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • High transition frequency, fT=3.2GHz(typ.)
  • Low output capacitance, Cob=0.8pF(typ.)

Applications

  • UHF converter.
  • Local oscillator Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 20 V Collector-Emitter V oltage V CEO 11 V Emitter-Base V oltage V EBO 5 V Collector Current I C 50 mA Power Dissipation Pd 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTC3838N3 SOT-23 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 2/4 BTC3838N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 20 - - V I C=10µA, IE=0 BVCEO 11 - - V I C=1mA, IB=0 BVEBO 3 - - V I E=10µA, IC=0 ICBO - - 500 nA V CB=10V , IE=0 IEBO - - 500 nA V EB=2V , IC=0 *VCE(sat) - - 0.5 V I C=10mA, IB=5mA *hFE 56 - 270 - V CE=10V , IC=5mA fT 1.4 3.2 - GHz V CE=10V , IC=10mA, f=500MHz Cob - 0.8 1.5 pF V CB=10V , IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank N P Q Range 56~120 82~180 120~270

CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 3/4 BTC3838N3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 Collector Current---IC(mA) Current Gain---HFE VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT) IC=2IB IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 10000 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---fT(MHz) Output Capacitance vs Reverse Biased Voltage 0.1 0.1 1 10 100 Reverse Biased Voltage---VCB(V) Output Capacitance---Cob(pF) Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 4/4 BTC3838N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3