BTC3356N3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 1/7 BTC3356N3 CYStek Product Specification Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC3356N3

Description

  • The BTC3356N3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
  • Low Cre. Typ. Cob=0.6pF
  • Pb-free and halogen-free package Symbol Outline BTC3356N3 SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 20 V Collector-Emitter V oltage VCEO 12 V Emitter-Base V oltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 2/7 BTC3356N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 20 - - V IC=100μA BVCEO 12 - - V IC=1mA BVEBO 3 - - V IE=10μA ICBO - - 100 nA VCB=20V IEBO - - 100 nA VEB=2V *VCE(sat) - - 150 mV IC=10mA, IB=1mA *VBE(sat) - - 1.2 V IC=10mA, IB=1mA *VBE(ON) 0.7 0.82 0.95 V VCE=3V , IC=10mA *hFE 80 - 250 VCE=10V , IC=20mA |S21e|² - 11.5 - dB VCE=10V , IC=20mA, f=1GHz fT - 6.5 - GHz VCE=10V , IC=20mA, f=1GHz Cre - 0.6 1 pF VCB=10V , f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank R S Range 80~160 125~250

Ordering Information

Device HFE Rank Package Shipping BTC3356N3-R-T1-G R SOT-23 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel BTC3356N3-S-T1-G S SOT-23 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 3/7 BTC3356N3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) 1.5mA 2mA 2.5mA 5mA IB=500uA Current Gain vs Collector Current 100 1000 11 0 100 Current Gain vs Collector Current 100 1000 1 10 100 IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=2V VCE=1V IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C Current Gain vs Collector Current 100 1000 1 10 100 IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=5V Current Gain vs Collector Current 100 1000 1 10 100 IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=10V

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 4/7 BTC3356N3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 1 10 100 IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=5IB Saturation Voltage vs Collector Current 100 1000 1 10 100 IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 IC, Collector CurrentmA) Saturation Voltage---(mV) VBESAT@IC=5IB Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 IC, Collector CurrentmA) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C Capacitance vs Reverse-biased Voltage 0.1 0.1 1 10 100 VR, Reverse-biased Voltage(V) Capacitance---(pF) Cib Cob Power Derating Curve 100 150 200 250 300 0 25 50 75 100 125 150 175 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 5/7 BTC3356N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 6/7 BTC3356N3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C622N3 Issued Date : 2013.03.06 Revised Date : 2013.04.09 Page No. : 7/7 BTC3356N3 CYStek Product Specification SOT-23 Dimension *:Typical Inches Millimeters H JKD A L GV C B S H 0.0005 0.0040 0.013 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead :Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: Product Code Date Code: Year+Month Year: 3→2003, 4→2004 HFE Rank