BTC2655K3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • High breakdown voltage, BVCEO≥ 60V
  • Large continuous collector current capability
  • Low collector saturation voltage
  • Pb-free lead plating package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2000 pcs / tape & box BTC2655K3-0-BM-G TO-92L (Pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton BTC2655K3 TO-92L B：Base C：Collector E：Emitter BVCEO 60V IC 2A RCESAT(max) 300mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 2/7 BTC2655K3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 120 V Collector-Emitter V oltage VCEO 60 V Emitter-Base V oltage VEBO 7 V Collector Current (DC) IC 2 A Collector Current (pulse) ICP 5 (Note) A Base Current IB 0.5 A Power Dissipation PD 900 mW Thermal Resistance, Junction to Ambient RθJA 139 °C/W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : Pulse test, pulse width≤300μs, duty cycle≤2% Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 120 - - V IC=50μA BVCEO 60 - - V IC=1mA BVEBO 7 - - V IE=50μA ICBO - - 100 nA VCB=120V IEBO - - 100 nA VEB=7V *VCE(sat) - 100 300 mV IC=1A, IB=50mA *RCE(sat) - 100 300 mΩ IC=1A, IB=50mA *VCE(sat) - - 350 mV IC=1A, IB=20mA *VBE(sat) 0.5 0.9 1.2 V IC=1A, IB=50mA *hFE 1 200 - 400 - VCE=2V , IC=500mA *hFE 2 80 - - - VCE=2V , IC=1.5A fT - 250 - MHz VCE=2V , IC=300mA, f=100MHz Cob - 13 - pF VCB=10V , IE=0A,f=1MHz ton - 40 - tstg - 500 - tf - 120 - ns VCC=30V , IC=1A, IB1=-IB2=33mA, RL=30Ω *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 3/7 BTC2655K3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 200 400 600 800 1000 1200 1400 1600 1800 2000 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=0 IB=2mA IB=4mA IB=6mA IB=8mA IB=10mA Emitter Grounded Output Characteristics 100 200 300 400 500 600 700 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=500uA IB=1mA IB=1.5mA IB=2mA IB=2.5mA Emitter Grounded Output Characteristics 100 120 140 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=100uA IB=200uA IB=300uA IB=400uA IB=500uA IB=0 Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=2V VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=50IB IC=20IB IC=100IB VCE(SAT) Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=50IB

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 4/7 BTC2655K3 CYStek Product Specification Characteristic Curves(Cont.) On Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VCE=2V Capacitance Characteristics 100 1000 0.1 1 10 100 Reverse-biased Voltage---(V) Capacitance---(pF) f=1MHz Cib Cob Cutoff Frequency vs Collector Current 100 1000 1 10 100 1000 Collector Current --- IC(mA) Cutoff Frequency---FT(MHZ) FT@VCE=5V Power Derating Curve 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 5/7 BTC2655K3 CYStek Product Specification TO-92L Taping Outline Millimeters DIM Item Min. Max. A1 Component body width 4.70 5.10 A Component body height 7.80 8.20 T Component body thickness 3.70 4.10 d Lead wire diameter 0.35 0.55 d1 Lead wire diameter 1 0.60 0.80 P Pitch of component 12.40 13.00 P0 Feed hole pitch 12.50 12.90 P2 Hole center to component center 6.05 6.65 F1, F2 Lead to lead distance 2.20 2.80 △h Component alignment, F-R -1.00 1.00 W Tape width 17.50 19.00 W0 Hole down tape width 5.50 6.50 W1 Hole position 8.50 9.50 W2 Hole down tape position - 1.00 H Height of component from tape center 19.00 21.00 H0 Lead wire clinch height 15.50 16.50 L1 Lead wire (tape portion) 2.50 - D0 Feed hole diameter 3.80 4.20 t1 Taped lead thickness 0.35 0.45 t2 Carrier tape thickness 0.15 0.25 P1 Position of hole 3.55 4.15 △P Component alignment -1.00 1.00

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 6/7 BTC2655K3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 217°C 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 7/7 BTC2655K3 CYStek Product Specification TO-92L Dimension *: Typical Inches Millimeters Inches C2655 Marking: Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92L Plastic Package CYStek Package Code: K3 Product Name Date Code: Year+Month Year: 7→2007, 8→2008 D1 0.157 - 4.000 - Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.