BTC1510J3_09 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 BTC1510J3 CYStek Product Specification NPN Epitaxial Planar Transistor BVCEO 150V IC 10A RCESAT 220mΩ BTC1510J3

Description

The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features:

  • High BVCEO
  • Low VCE(SAT)
  • High current gain
  • Monolithic construction with built-in base-emitter shunt resistors
  • TO-252 surface mount package
  • RoHS compliant package Equivalent Circuit Outline TO-252 BTC1510J3 B：Base C：Collector C E R1≈8k E：Emitter B R2≈120 B C E

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 2/7 BTC1510J3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 150 V Collector-Emitter V oltage VCEO 150 V Emitter-Base V oltage VEBO 5 V IC(DC) 10 Collector Current IC(Pulse) 15 *1 A Pd(TA=25℃) 1.75 Power Dissipation Pd(TC=25℃) 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1. Single Pulse Pw=100ms Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 150 - - V IC=100μA, IE=0 BVCEO 150 - - V IC=1mA, IB=0 ICEO - - 200 μA VCE=150V , IE=0 ICBO - - 200 μA VCB=150V , IE=0 IEBO - - 2 mA VEB=5V , IC=0 *VCE(sat) 1 - - 1.5 V IC=5A, IB=10mA *VCE(sat) 2 - - 3 V IC=10A, IB=100mA *VCE(sat) 3 - - 2 V IC=5A, IB=2.5mA *VBE(sat) - - 2 V IC=5A, IB=5mA *VBE(on) 1 - - 2.8 V VCE=3V , IC=5A *VBE(on) 2 - - 4.5 V VCE=3V , IC=10A *VFEC - - 3 V IC=5A *hFE1 2 - 20 K VCE=3V , IC=5A *hFE2 100 - - - VCE=3V , IC=10A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking BTC1510J3 TO-252 (RoHS compliant) 2500 pcs / Tape & Reel C1510

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 3/7 BTC1510J3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain--- HFE 25℃ 125℃ 75℃ HFE@VCE=3V Saturation Voltage vs Collector Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=250IB 125℃75℃ 25℃ Saturation Voltage vs Collcetor Current 100 1000 10000 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=2000IB 25℃ 75℃ 125℃ Saturation Voltage vs Colltctor Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=500IB 25℃ 75℃ 125℃ Saturation Voltage vs Collcetor Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBE(ON)@VCE=3V 25℃ 75℃ 125℃ Power Derating Curve 0.25 0.5 0.75 1.25 1.5 1.75 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 4/7 BTC1510J3 CYStek Product Specification Characteristic Curves(Cont.) Power Derating Curve 0 50 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 5/7 BTC1510J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 6/7 BTC1510J3 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature

CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 7/7 BTC1510J3 CYStek Product Specification TO-252 Dimension *: Typical Inches Millimeters Inches Millimeters Marking: B A C E H I J K D F GL Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 C1510 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: KFC; pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.