BTA04F FOSHAN | Alldatasheet
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Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-220F 塑封封装 双向可控硅。Triac in a TO-220F Plastic Package. 低控制极触发电流。 Low gate triggering current. 用于需要高灵敏度触发的场合。 General purpose applications where gate high sensitivity required. PIN1：Main Terminal 1 PIN 2 ：Main Terminal 2 PIN 3 ：Gate 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 3 2 1
Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages(Tj=110℃) VDRM/VRRM 600 V RMS on-state current(TC=90℃) IT(RMS) 4.0 A Non-repetitive peak on-state current I TSM(t=8.3ms) 42 A Non-repetitive peak on-state current I TSM(t=10ms) 40 A t for fusing I 2t(t=10ms) 8.0 A 2s Repetitive rate of rise of on-state current after triggering（Repetitive F=50Hz） dI/dt A/μs Repetitive rate of rise of on-state current after triggering（Non repetitive） 50 Junction Temperature Tj -40～110 ℃ Storage Temperature Range Tstg -40～150 ℃ Junction to ambient R th(j-a) 60 /W ℃ Junction to case for DC Rth(j-c) 4.4 /W ℃ Junction to case for DC(AC F=50Hz) 3.3 /W ℃ 符号 Symbol 测试条件 Test Conditions 信号区 Quadrant BTA04F 单位 Unit T D S A IGT VD=12V R L=33Ω Tj=25℃ I-II-III Max. 5.0 5.0 10 10 mA IV Max. 5.0 10 10 25 VGT VD=12V R L=33Ω Tj=25℃ I-II-III Max. 1.5 V IV Max. 1.75 VGD VD=VDRM RL=3.3KΩ Tj=110℃ I-II-III-IV Min. 0.2 V tgt VD=VDRM I G=40mA Dig/dt=0.5A/μs Tj=25℃ I-II-III-IV Typ. 2.0 μs IL I G=1.2IGT Tj=25℃ I-III-IV Typ. 10 10 20 20 mA II 20 20 40 40 IH * IT=100mA Gate open T j=25℃ Max. 15 15 25 25 mA VTM * ITM=5.5A tp=380 μs T j=25℃ Max. 1.65 V IDRM V DRM r a t e d T j=25℃ Max. 0.01 mA IRRM V RRM r a t e d T j=110℃ Max. 0.75 mA (dV/dt)* Linear slope up to VD=67% VDRM gate openTj=110℃ Typ. 10 10 - - V/μs Min. - - 10 10 *For either polarity of electrode T2 voltage with reference to electrode T1 GATE CHARACTERISTICS (maximum values) PG(AV)=1W PGM=40W(tp=20μs) I GM=4A(tp=20μs) VGM=16V(tp=20μs) 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)
Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve
Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions
Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： BR： 为公司代码 BTA04： 为产品型号 60T: 为 VRRM、IGT 分档代码 Note: BR: Company Code BTA04: Product Type. 60T: V RRM、IGT Bracket code **: Lot No. Code, code change with Lot No. BR ** BTA04 60T
Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-220/F 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-220/F 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 使用说明 / N o t i c e s