BT151 FOSHAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 1 / 6 TO-220 塑封封装 单向可控硅。Thyristor in a TO-220 Plastic Package. 芯片采用玻璃钝化和塑氧环脂封装。 Glass passivated thyristors in a plastic envelope. 主要应用于要求双向高电压承受能力和高效热转换领域，其典型应用于马达控制、工业和家庭照明、加 热和静电开关。 Use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.Typical applications include motor control，industrial and domestic lighting, heating and static switching. PIN1：Cathode PIN 2 ：Anode PIN 3 ：Gate 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 3 2 1
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit -500R -650R -800R Repetitive peak off-state voltages VDRM VRRM 500 650 800 V Average on-state current I T(AV) 7.5 A RMS on-state current I T(RMS) 12 A Non-repetitive peak on-state current I TSM(t=10ms) 100 A Non-repetitive peak on-state current I TSM(t=8.3ms) 110 A t for fusing I 2t(t=10ms) 50 A 2S Repetitive rate of rise of on-state current after triggering dIT/dt 50 A/ μs Peak gate current I GM 2 A Peak gate voltage V GM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power P GM 5 W Average gate power (Over any 20 ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -40 ～150 ℃ Thermal resistance junction to ambient R th(j-a) 60 K/W Thermal resistance junction to mounting base R th(j-mb) 1.3 K/W 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Gate trigger current I GT VD=12V I T=0.1A 2 15 mA Latching current I L V D=12V I GT=0.1A 10 40 mA Holding current I H VD=12V I GT=0.1A 7 20 mA On-state voltage V T I T=23A 1.4 1.75 V Gate trigger voltage V GT VD= 1 2 V I T=0.1A 0.6 1.5 V VD=VDRM(max) IT=0.1A Tj=125℃ 0.25 0.4 Off-state leakage current I D,IR VD=VDRM(max) VR=VRRM(max) Tj=125℃ 0.1 0.5 mA Gate controlled turn-on time tgt ITM= 4 0 A V D=VDRM IG=0.1A dIg/dt=5A/μs 2 μs 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： BR： 为公司代码 BT151： 为产品型号 650R: 为耐压分档 Note: BR: Company Code BT151: Product Type. 650R: Withstand Voltage Symbol **: Lot No. Code, code change with Lot No. BR ** BT151 650R
R e v . D M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-220/F 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-220/F 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 使用说明 / N o t i c e s