BT134 FOSHAN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-220 塑封封装 双向可控硅。Triac in a TO-220 Plastic Package. 高双向瞬态电压能力和高热循环性能。 high bidirectional transient and blocking voltage capability and high thermal cycling performance. 主要用于马达控制,工业和家庭照明灯,加热控制和静电开关。 Typical applications include motor control,industrial and domestic lighting, heating and static switching. PIN1:Main Terminal 1 PIN 2 :Main Terminal 2 PIN 3 :Gate 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 3 2 1

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM 500 600 800 V RMS on-state current IT(RMS) 4.0 A Non-repetitive peak on-state current I TSM(t=20ms) 25 A Non-repetitive peak on-state current I TSM(t=16.7ms) 27 A t for fusing I 2t(t=10ms) 3.1 A 2S Repetitive rate of rise of on-state current after triggering dIT/dt(T2+G+) 50 A/ μS Peak gate current I GM 2.0 A Peak gate voltages V GM 5.0 V Peak gate power P GM 5.0 W Average gate power P G(AV) 0.5 W Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -40~150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Gate trigger current I GT BT134- F/G E E F G VD=12V IT=0.1A T2+G+ 5.0 2.5 35 10 25 50 mA T2+G- 8.0 4.0 35 10 25 50 T2-G- 11 5.0 35 10 25 50 T2-G+ 30 11 70 25 70 100 Latching current I L VD=12V IGT=0.1A T2+G+ 7.0 3.0 20 15 20 20 mA T2+G- 16 10 30 20 30 45 T2-G- 5.0 2.5 20 15 20 30 T2-G+ 7.0 4.0 30 20 30 45 Holding current I H VD= 1 2 V I GT=0.1A 5.0 2.2 15 15 15 30 mA On-state voltage V T I T=5.0A 1.4 1.7 V Gate trigger voltage VGT (I-II-III) VD= 1 2 V I T=0.1A 0.7 1.5 V VD=400V,IT=0.1A, Tj=125℃ 0.25 0.4 Off-state leakage current ID VD=VDRM(max) T j=125℃ 0.1 0.5 mA Critical rate of rise of off-state current tgt ITM=6A,VD=VDRM IG=0.1A dIg/dt=5A/μs 2.0 μs Repetitive peak off-state current dVD/dt VD=67% VDRM gate open Tj=125℃ 250 V/ μs 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明: BR: 为公司代码 BT134:  为型号代码 60E:  为 VRRM、IGT 分档代码 Note: BR:   Company Code BT134: Product Type. 60E: V RRM、IGT Bracket code **:  Lot No. Code, code change with Lot No. BR ** BT134 60E

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明: N o t e : 1、预热温度 25~150℃,时间 60~90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2~10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度:270±5℃ 时间:10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit :mm Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-220/F 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit :mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-220/F 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 使用说明 / N o t i c e s