BT131 FOSHAN | Alldatasheet

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Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92 塑封封装双向可控硅。Triac in a TO-92 Plastic Package. 低功率控制极电路。 Low power gate trigger circuits.. 一般用于双向转换和增强型控制。 USE in general purpose bi-directional switching and phase control application. PIN1：Main Terminal 2 PIN 2 ：Gate PIN 3 ：Main Terminal 1 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 1 23

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM 500 600 800 V RMS on-state current IT(RMS) 1.0 A Non-repetitive peak on-state current I TSM(t=20ms) 16 A t for fusing I 2t(t=10ms) 1.28 A 2S Repetitive rate of rise of on-state current after triggering dIT/dt(T2+G+) 50 A/μS dIT/dt(T2+G-) 50 dIT/dt(T2-G-) 50 dIT/dt(T2-G+) 10 Peak gate current I GM 2.0 A Peak gate voltages V GM 5.0 V Peak gate power P GM 5.0 W Average gate power P G(AV) 0.5 W Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -40～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Gate trigger current I GT VD=12V IT=0.1A I-II-III 1.1 3.0 mA IV 4.5 10 Latching current I L VD=12V IGT=0.1A I-III 1.0 5.0 mA II-IV 3.0 8.0 Gate trigger voltage V GT VD=12V IGT=0.1A I-II-III 0.7 1.5 V IV 1.5 2.0 VD=400V T j=125℃ IT=0.1A 0.2 0.3 Holding current I H VD=12V I GT=0.1A 0.8 5.0 mA On-state voltage V T I T=1.5A 1.2 1.5 V Off-state leakage current I D VD=VDRM(max) T j=125℃ 0.1 0.5 mA Critical rate of rise of off-state current IDRM V DRM=600V 0.5 mA Repetitive peak off-state current I RRM V RRM=600V 0.5 mA 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： BT131：  为产品型号 600:   为 V DRM 档次代码 Note: BR: Company Code. BT131: Product Type. 600: V DRM Level Code **: Lot No. Code, code change with Lot No. BT131 ** BR 600

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10 ℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92 1,000 10 10,000 5 50,000 135×190 237×172×102 560×245×195 1,000 10 10,000 10 100,000 135×190 237×172×102 560×245×375 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92 3,000 1 120 10 30,000 328×230×42 小箱 480×346×235， 大箱 547×407×268 使用说明 / N o t i c e s