BSY88 MICRO-ELECTRONICS | Alldatasheet
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GENERAL DESCRIPTION : MECHANICAL OUTLINE The BSY88 is a NPN silicon” planar epitaxial transistor. It features high breakdown and Me. low saturation voltage. It is SS intended for medium power amplifier ! driver stage and general purpose industrial applications. | cB THERMAL CHARACTERISTICS : Thermal Resistance from Junction to Ambient, @(j-amb) 0.22°C/mW Thermal Resistance from Junction to Case, ®@(j-case) 0.058°C /mW | Maximum Collector Junction Temperature, Tj 200°C Storage Temperature Range, Tstg 65°C to +200°C Soldering Temperature (1/16 inch from Case for 10 seconds) 260 C ABSOLUTE MAXIMUM RATINGS : yat inuous Power Dissipation @ Tg=25°C, P max 0.8W jntinuous Power Dissipation @ Tg=25°C, P max 3W Continuous Power Dissipation @ Tc=100°C, P max 1.7W Continuous Collector Current, Ig max 500mA Collector-Base Voltage, Vopo 100V Collector-Emitter Voltage, Voro 60v Emitter-Base Voltage, VEpo 7vV ELECTRICAL CHARACTERISTICS @ Ta=25°C (unless otherwise stated) : . [PaRaweTeR | SwWHOL [MIN T¥P WAX [UNIT [TEST CONDITIONS | ICollector-Base Cutoff Current Topo 0.5 10] nA | Vop=75V °. | ICollector-Base Cutoff Current Icgpo 0.4 10 nA Vop=75V T,=150 Cc Emitter~Base Cutoff Current TEBo 1 10 nA Vpp=5V Collector-Emitter Saturation Voltage Vor (sat) 0.18 0.6 | Vv | Ig=150mA Ip=15mA Base-Emitter Saturation Voltage Vr (sat) 0.95 1.2 | Vv | Icgei50mA Ip=15mA D.C. Current Gain hye 35 100 Vog=l0Vv Ig=0.1mA D.C. Current Gain hep 125 Vog=10V I,=1lmA D.C. Current Gain hep 75 180 Vop=10V 1,=10mA D.C. Current Gain DFE 100 300 Vcop=l0V Ig=150mA D.C. Current Gain hyg 35 Vog=10V I,=500mA Collector-Base Capacitance Cop 10 pF Vop=l0V f=1MHz Emitter-Base Capacitance CEB 35 | pF | Vgp=0.5V f=1MHz Transition Frequency fp 180 MHz |Vcp=10V = Ig=50mA £=50MHZ Noise Figure N.F. 6 dB Vog=10V IQ=0.3mA y Rg=1.5Kohm RE £=30Hz to 15KHz MICRO ELECTRONICS LID. Sta BR2 4) Me 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. |
----- CONTINUE ----- ELECTRICAL CHARACTERISTICS @ Ta=25°C (unless otherwise stated) : deena eee es eon | PARAMETER MIN TYP MAX TEST CONDITIONS | Small Signal Current Gain hfe 60 150 280 Vop=5V Ic=lmA | £=1KHz Input Impedance hie 2 3.5 9.5 | Kohm | Vog=5V Ip=1lmA f=1KHz Voltage Feedback Ratio hye 0.7 3 | 1074 | Vog=5V I=lma f=1KHz Output Admittance hoe 3 6 10 | us Vog=5V I=1mA f=1KHz O oe C 7 S a-2. Bf ;