BSX62 COMSET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

SSWWIITTCCHHIINNGG TTRRAANNSSIISSTTOORRSS The BSX62 and BSX63 are NPN switching transistors mounted in TO-39 metal package. They are intended for use in medium power switching. High current and low voltage. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BSX62 BSX63 VCEO Collector-Emitter Voltage I B =0 40 60 V VCBO Collector-Base Voltage I E =0 60 80 V VEBO Emitter-Base Voltage I C =0 5 V IC Collector Current 3 A ICM Collector Peak Current 3 A IBM Base Peak Current 500 mA PD Total Power Dissipation T amb = 25° 5 W TJ Junction Temperature 200 °C Tamb Operating ambient temperature -65 to +150 TStg Storage Temperature range -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 200 °C/W RthJ-c Thermal Resistance, Junction to case 28 °C/W SWITCHING TIMES Symbol Ratings Value Unit ton Turn-on time ICon = 1 A; IBon = 50 mA IBoff = -50 mA 300 ns toff Turn-off time 1.5 µs B C E

26/09/2012 COMSET SEMICONDUCTORS 2/3

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = 40 V, IE =0 BSX62 - - 100 nA VCB = 60 V, IE =0 BSX63 VCB = 40 V, IE = 0 Tj = 150°C BSX62 - - 100 µA VCB = 60 V, IE =0 Tj = 150°C BSX63 IEBO Emitter Cutoff Current V BE = 5.0 V, IC =0 - - 100 nA VCE(SAT) Collector-Emitter saturation Voltage IC = 1 A, IB = 100 mA - - 0.7 V IC = 2 A, IB = 200 mA - - 0.8 VBE(SAT) Base-Emitter saturation Voltage IC = 1 A, IB = 100 mA - - 1.2 V IC = 2 A, IB = 200 mA - - 1.3 VBE Base-Emitter Voltage IC = 100 mA, VCE = 1 V - - 1 V IC = 1 A, VCE = 1 V 1 - 1.2 IC = 2 A, VCE = 5 V - - 1.3 hFE DC Current Gain IC = 100 m VCE = 1 V BSX62/10 - 110 - BSX63/10 BSX62/16 - 180 - BSX63/16 IC = 1 A VCE = 1 V BSX62/10 63 100 160 BSX63/10 BSX62/16 100 160 250 BSX63/16 IC = 2 A VCE = 1 V BSX62/10 - 70 - BSX63/10 BSX62/16 - 120 - BSX63/16 fT Transition frequency IC = 200 mA, VCE = 10 V f = 100MHz 30 70 - MHz CC Collector capacitance IE = ie =0, VCB = 10 V f = 1MHz - - 70 pF

26/09/2012 COMSET SEMICONDUCTORS 3/3 MECHANICAL DATA CASE TO-39 Revised August 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. Da ta are subject to change without notice. Comset Se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. Comset Semicon ductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector