APT6030BN COMSET | Alldatasheet
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22/10/2012 COMSET SEMICONDUCTORS 1/4 SEMICONDUCTORS N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 600 V IDS Continuous Drain Current TC= 37°C 23 A IDM Pulsed Drain Current TC= 25°C 92 VGS Gate-Source Voltage 30 V RDS(on) Drain-Source on Resistance 0.30 Ω PT Total Power Dissipation @ TC= 25°C 360 W Linear Derating Factor 2.9 W/°C tJ Operating Temperature -55 to +150 °C tstg Storage Temperature range -55 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, junction-case 0.34 °C/W RthJA Thermal Resistance, junction-ambient 40 FEATURE N channel in a plastic TO-3PML package. Compliance to RoHS.
22/10/2012 COMSET SEMICONDUCTORS 2/4 SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VDSS Drain-Source Breakdown Voltage ID= 250 µA, VGS= 0 V 600 - - V VGS(th) Gate-threshold Voltage I D=1 mA, VDS= VGS 2 - 4 V IDSS Zero Gate Voltage Drain Current VDS= 600 V, VGS= 0 V Tj= 25 °C - - 250 µA VDS= 0.8 VDSS, VGS= 0 V Tj= 125 °C - - 1 mA IGSS Gate-Source leakage Current V GS= 30 V, VDS= 0 V - - 100 nA ID(on) On State Drain Current VGS= 30 V VDS >ID(on)xRDS(on)Max - - 23 A RDS(on) Drain-Source on Resistance 0.5I D(Cont), VGS= 10 V - - 0.3 Ω DYNAMIC CHARACTERISTICS Symbol Ratings Test Condition(s) Min Typ Max Unit CISS Input Capacitance VGS= 0 V, VDS= 25 V f= 1MHz - 2905 3500 pF COSS Output Capacitance - 505 710 CRSS Reverse transfer Capacitance - 190 285 td(on) Turn-on Delay Time VDD= 300 V, VGS= 15 V IDS= ID(Cont) @ 25°C RGS= 1.8 Ω - 20 40 ns tr Rise time - 35 70 td(off) Turn-off Delay Time - 90 130 tf Fall Time - 50 100 Qg Total Gate Charge VDD= 300 V, VGS= 10 V IDS= ID(Cont) @ 25°C 140 210 nC Qgs Gate Source Charge 18 27 Qgd Gate-Drain Charge 75 110
22/10/2012 COMSET SEMICONDUCTORS 3/4 SEMICONDUCTORS REVERSE DIODE Symbol Ratings Test Condition(s) Min Typ Max Unit IS Continuous Source Current. (Body Diode) - - 23 A ISM Pulsed Source Current. (Body Diode) - - 92 VSD Diode Forward Voltage V GS = 0 V, Is = -ID(Cont) - - 1.3 V Trr Reverse Recovery Time Is = -ID(Cont) di/dt = 100 A/µs - 480 960 ns Qrr Reverse Recovery Charge - 8 16 µC SAFE OPERATING AREA CHARACTERISTICS Symbol Ratings Test Condition(s) Min Typ Max Unit SOA1 Safe Operating Area VDS= 0.4VDSS IDS= PD/0.4VDSS t= 1 sec 360 W SOA2 Safe Operating Area IDS= ID(Cont) VDS= PD/ ID(Cont) t= 1 sec 360 W ILM Inductive Current Clamped 92 A
22/10/2012 COMSET SEMICONDUCTORS 4/4 SEMICONDUCTORS MECHANICAL DATA CASE TO-3PML Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Dimensions are for refer ence only and may slightly vary . Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconducto rs assume any liability arisi ng out of the application or use of any product and spec ifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Gate Pin 2 : Drain Pin 3 : Source 1 2 3