BD643 COMSET | Alldatasheet

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Technical content

VCBO Collector-Base Voltage BD651 140 V BD643 45 BD645 60 BD647 80 BD649 100 VCEO Collector-Emitter Voltage BD651 120 V BD643 BD645 BD647 BD649 VEBO Emitter-Base Voltage BD651 5 V BD643 BD645 BD647 BD649 IC Collector Current BD651 8 A BD643 BD645 BD647 BD649 ICM Collector Peak Current BD651 12 A SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652

@ T mb < 25° BD651

62.5 Watts

Ts Storage Temperature range BD651 -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings Value Unit BD643 BD645 BD647 BD649 RthJ-MB From junction to mounting base BD651

2 K/W

RthJ-A From junction to ambient in free air BD651

70 K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BD643 BD645 BD647 BD649 IE=0,VCB =VCEOMAX BD651 - - 0.1 mA BD643 BD645 BD647 BD649 ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMAX, TJ=150°C BD651 - - 1 mA BD643 BD645 BD647 BD649 ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMAX BD651 - - 0.2 mA BD643 BD645 BD647 BD649 IEBO Emitter Cutoff Current VEB=5 V, IC=0 BD651 - - 5.0 mA BD643 - - 2 BD645 - - - BD647 - - - BD649 - - - IC=4 A, IB=16 mA BD651 - - - BD643 - - - BD645 - - 2 BD647 - - 2 BD649 - - 2 IC=3 A, IB=12 mA BD651 - - 2 BD643 - - 2.5 BD645 - - 2.5 BD647 - - 2.5 BD649 - - 2.5 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5 A, IB=50 mA BD651 - - 2.5 V BD643 BD645 BD647 BD649 VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA BD651 - - 3 V

BD643 - - 2.5 BD645 - - - BD647 - - - BD649 - - - IC=4 A, VCE=3 V BD651 - - - BD643 - - - BD645 - - 2.5 BD647 - - 2.5 BD649 - - 2.5 VBE Base-Emitter Voltage (*) IC=3 A, VCE=3 V BD651 - - 2.5 V BD643 - - BD645 - - BD647 - - BD649 - - VCE=3.0 V, IC=0.5 A BD651 - 1900 BD643 750 - - BD645 - - - BD647 - - - BD649 - - - VCE=3.0 V, IC=4 A BD651 - - - BD643 - - - BD645 - - BD647 - - BD649 - - VCE=3.0 V, IC=3 A BD651 750 - - BD643 - - BD645 - - BD647 - - BD649 - - hFE DC Current Gain (*) VCE=3.0 V, IC=8 A BD651 - 1800 BD643 10 - - BD645 - - - BD647 - - - BD649 - - - VCE=3.0 V, IC=4 A, f=1MHz BD651 - - - BD643 - - - BD645 10 - - BD647 10 - - BD649 10 - - hfe Small Signal Current Gain VCE=3.0 V, IC=3 A, f=1MHz BD651 10 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

MECHANICAL DATA CASE TO-220 DIMENSIONS mm inches A 9,86 0,39 B 15,73 0,62 C 13,37 0,52 D 6,67 0,26 E 4,44 0,17 F 4,21 0,16 G 2,99 0,11 H 17,21 0,68 L 1,29 0,05 M 3,6 0,14 N 1,36 0,05 P 0,46 0,02 R 2,1 0,08 S 5 0,19 T 2,51 0,098 U 0,79 0,03 Pin 1 : Anode 1 Pin 2 : Anode 2 Pin 3 : Gate