BDY26 COMSET | Alldatasheet

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BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Page 1 of 4 COMSET SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 BDY27, 184T2 200 VCEO Collector-Emitter Voltage BDY28, 185T2 250 V BDY26, 183T2 300 BDY27, 184T2 400 VCBO Collector-Base Voltage BDY28, 185T2 500 V VEBO Emitter-Base Voltage BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 10 V IC Collector Current BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 6 A IB Base Current BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 3 A PTOT Power Dissipation @ TC = 25° BDY26, 183T2 BDY27, 184T2 BDY28, 185T2

87.5 Watts

BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 -65 to +200 °C LF Large Signal Power Amplification High Current Fast Switching NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Page 2 of 4 COMSET SEMICONDUCTORS THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 2° C / W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDY26, 183T2 180 - - BDY27, 184T2 200 - - BDY28A, 185T2A 250 - - BDY28B, 185T2B 250 - - VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=50 mA, IB=0 BDY28C, 185T2C 220 - - V VCE=180 V BDY26 -- VCE=200 V BDY27 -- ICEO Collector-Emitter Cutoff Current VCE=250 V BDY28 -- 1.0 mA IEBO Emitter-Base Cutoff Current VEB=10 V BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 -- 1 . 0 m A VCE=250 V VBE=0 V BDY26, 183T2 -- VCE=300 V VBE=0 V BDY27, 184T2 -- ICES Collector-Emitter Cutoff Current VCE=400 V VBE=0 V BDY28, 185T2 -- 1.0 mA

BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Page 3 of 4 COMSET SEMICONDUCTORS BDY26, 183T2 -- BDY27, 184T2 -- VCE(SAT) Collector-Emitter saturation Voltage (*) IC=2.0 A, IB=0.25 A BDY28, 185T2 -- 0.6 V BDY26, 183T2 300 - - BDY27, 184T2 400 - - V(BR)CBO Collector-Base Breakdown Voltage (*) IC=3 mA BDY28, 185T2 500 - - V BDY26, 183T2 -- BDY27, 184T2 -- VBE(SAT) Base-Emitter Voltage (*) IC=2.0 A, IB=0.25 A BDY28, 185T2 -- 1.2 V A - 55 - B - 65 - VCE=4 V, IC=1 A C - 90 - A 15 20 45 B 30 45 90 h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A C 75 82 180 fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 10 - - MHz td + tr Turn-on time IC=5 A, IB=1 A BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 --1 µs ts + tf Turn-off time IC=5 A, IB1=1 A, IB2=-1 A A B C 3.5 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Page 4 of 4 COMSET SEMICONDUCTORS MECHANICAL DATA Pin 1 : Base Pin 2 : Emitter Case : Collector DIMENSIONS mm A 25,45 B 38,8 C 30,09 D 17,11 E9 , 7 8 G 11,09 H8 , 3 3 L1 , 6 2 M 19,43 P4 , 0 8