BDX67_1 COMSET | Alldatasheet

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BDX67, A, B, C COMSET SEMICONDUCTORS 1/5 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX67 60 BDX67A 80 BDX67B 100 VCEO Collector-Emitter Voltage BDX67C 120 V BDX67 80 BDX67A 100 BDX67B 120 VCBO Collector-Base Voltage BDX67C 140 V BDX67 BDX67A BDX67B VEBO Emitter-Base Voltage BDX67C 5.0 V BDX67 BDX67A BDX67B IC(RMS) BDX67C BDX67 BDX67A BDX67B IC Collector Current ICM BDX67C A BDX67 BDX67A BDX67B IB Base Current BDX67C 0.25 A BDX67 BDX67A BDX67B PT Power Dissipation @ TC = 25° BDX67C

150 Watts

W/°C BDX67 TJ Junction Temperature BDX67A BDX67B TS Storage Temperature BDX67C -55 to +200 °C High current power darlingtons designed for power amplification and switching applications. NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS

BDX67, A, B, C COMSET SEMICONDUCTORS 2/5 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDX67 BDX67A BDX67B RthJ-C Thermal Resistance, Junction to Case BDX67C 1.17 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit BDX67 60 - - BDX67A 80 - - BDX67B 100 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, L=25mH BDX67C 120 - - V VCE=30 V BDX67 - - VCE=40 V BDX67A - - VCE=50 V BDX67B - - ICEO Collector Cutoff Current VCE=60 V BDX67C - - 3 mA BDX67 BDX67A BDX67B IEBO Emitter Cutoff Current VBE=5 V BDX67C - - 5.0 mA TCASE=25°C, VCB=60 V - - 1 TCASE=200°C, VCB=40 V BDX67 - - 5 TCASE=25°C, VCB=80 V - - 1 ICBO Collector-Base Cutoff Current TCASE=200°C, VCB=50 V BDX67A - - 5 mA

BDX67, A, B, C COMSET SEMICONDUCTORS 3/5 Symbol Ratings Test Condition(s) Min Typ Max Unit TCASE=25°C, VCB=100 V - - 1 TCASE=200°C, VCB=60 V BDX67B - - 5 TCASE=25°C, VCB=120 V - - 1 ICBO Collector-Base Cutoff Current TCASE=200°C, VCB=70 V BDX67C - 5 mA VCE=3 V, IC=1 A - 5200 - VCE=3 V, IC=10 A 1000 - - hFE DC Current Gain VCE=3 V, IC=16 A - 4000 - BDX67 BDX67A BDX67B VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mA BDX67C - - 2 V BDX67 BDX67A BDX67B VBE Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A BDX67C - - 2,5 V BDX67 BDX67A BDX67B VF Diode forward voltage IF=10 A BDX67C - 2,5 - V BDX67 BDX67A BDX67B Cc IE=0 A, VCB=10V BDX67C - 300 - pF BDX67 BDX67A BDX67B ton BDX67C - 1 - BDX67 BDX67A BDX67B toff Switching characteristics VCC=12V, IC=-10 A IB1=- IB2=0.04 A BDX67C - 3.5 - µs BDX67 BDX67A BDX67B fhfe VCE=-3 V, IC=-5 A BDX67C - 50 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

BDX67, A, B, C COMSET SEMICONDUCTORS 4/5 MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16 Pin 1 : Base Pin 2 : Emitter Case : Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice

BDX67, A, B, C COMSET SEMICONDUCTORS 5/5