BSX45 COMSET | Alldatasheet

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NNPPNN MMEEDDIIUUMM PPOOWWEERR TTRRAANNSSIISSTTOORRSS The BSX45-BSX46-BSX47 are NPN transistors mounted in TO-39 metal package. They are intended for use in general industrial applications. High current and low voltage. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BSX45 BSX46 BSX47 VCEO Collector-Emitter Voltage I B =0 40 60 80 V VCBO Collector-Base Voltage I E =0 80 100 120 V VEBO Emitter-Base Voltage I C =0 7 V IC Collector Current 1 A ICM Collector Peak Current 1.5 A IBM Base Peak Current 200 mA PD Total Power Dissipation T amb = 25° 6.25 W TJ Junction Temperature 200 °C Tamb Operating ambient temperature -65 to +150 TStg Storage Temperature range -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 200 °C/W RthJ-c Thermal Resistance, Junction to case 28 °C/W SWITCHING TIMES Symbol Ratings Value Unit ton Turn-on time ICon = 100mA; IBon = 5 mA IBoff = -5 mA 200 ns toff Turn-off time 850 ns B C E

26/09/2012 COMSET SEMICONDUCTORS 2/3

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = 60 V, IE =0 BSX45 - - 30 nA BSX46 VCB = 80 V, IE =0 BSX47 VCB = 60 V, IE = 0 Tj = 150°C BSX45 - - 10 µA BSX46 VCB = 80 V, IE =0 Tj = 150°C BSX47 IEBO Emitter Cutoff Current V BE = 5.0 V, IC =0 - - 10 nA VCE(SAT) Collector-Emitter saturation Voltage IC = 1 A, I B = 100 mA BSX45 - - 1 V BSX46 IC = 500 mA IB = 25 mA BSX47 - - 0.9 VBE Base-Emitter Voltage IC = 100 mA, VCE = 1 V - - 1 V IC = 500 mA, VCE = 1 V 0.75 - 1.5 IC = 1 A, VCE = 1 V - - 2 hFE DC Current Gain IC = 100 µA VCE = 1 V BSX45/10 15 40 - BSX46/10 BSX47/10 BSX45/16 25 90 - BSX46/16 IC = 100 mA VCE = 1 V BSX45/10 63 100 160 BSX46/10 BSX47/10 BSX45/16 100 160 250 BSX46/16 BSX47/16 IC = 500 mA VCE = 1 V BSX45/10 25 40 - BSX46/10 BSX47/10 BSX45/16 35 60 - BSX46/16 IC = 1 A, VCE = 1 V BSX45/10 - 20 - BSX46/10 BSX47/10 BSX45/16 - 30 - BSX46/16 fT Transition frequency IC = 50 mA, VCE = 10 V f = 100MHz 50 - - MHz F Noise figure IC = 100 µA, VCE = 5 V, RS=1kΩ f = 1kHz, B =200Hz - 3.5 - db

26/09/2012 COMSET SEMICONDUCTORS 3/3 MECHANICAL DATA CASE TO-39 Revised August 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. Da ta are subject to change without notice. Comset Se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. Comset Semicon ductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector