BSX19 MICRO-ELECTRONICS | Alldatasheet
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pee MEz NPN SILICON PLANAR EPITAXIAL TRANSISTORS | PA =e IMICREL ECE rRONICS = | | CASE T0-18 THE BSX19 AND BSX20 ARE NPN ‘SILICON PLANAR ff EPITAXIAL TRANSISTORS DESIGNED FOR VERY HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VcBO 40v Collector-Fmitter Voltage (VBE=0) VcES 40v Collector-Hmitter Voltage (IB-0) VCEO 15V Emitter-Base Voltage VEBO 4.5V Collector Peak Current IcM 500mA Total Power Dissipation @ TaA=25°C Prot 360m Operating Junction & Storage Temperature Tj, Tstg 65 to 200°C y ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted MIN MAX | MIN MAX a | Collector-Emitter Breakdown BVCEO 15 15 v Ic=10mA = IBe0 | Voltage : Collector-Emitter Breakdown BVCER 20 20 Vv Ic=10mA RpE=100 Voltage Collector Cutoff Current IcBo 400 400 | nA VCB=20V IB=0 . 30 30 pa Mibartoie Tp=0 Collector Cutoff Current Icks 0.4 0.4 pa VcE=15V VBE=0 Tj=55°C 1 1 pa VcE=40V VBE-0 Collector Cutoff Current IcEv 0.6 0.6 pA Vcr=15V VBE=-3V | 15j=55°C Emitter Cutoff Current TEBO 10 10 pA VEB=4.5V Ic=0 “ ¥ collector-Bmitter Saturation VcE(sat)} 0.25 0.25 | V Ig=10mA IB=1mA | Voltage 0.3 Vv Ic=10mA Ip=0.6mA s 0.3 |V Ic=10mA Ip=0.3mA 0,6 0.6 | V Ic¢=100mA Ip=10mA 38 HUNG TO ROAD, KWUN TONG, HONG KONG. X $3510 . - MICRO ELECTRONICS LTD. «won tons P. 0. Boxto477 CABLE ADDRESS “MICROTRON” | " \\TELEPHONE:- 3-430181-6 2-893363, 3-902423 | ' FAX: 3-410321 2: Bmp ee a
- ~ - Continued - - - BSX19 BSX20 PARAMETER SYMBOL | yay wax | MIN MAX TEST CONDITIONS Base-Emitter Saturation Voltage| VBE(sat) | 0.7 0.85 0.7 0.85) V Ic=10mA Ip=1mA | 1.5 1.5/]V Ic=100mA Ip=10mA Base-Emitter Voltage VBE 0.35 0.35 Vv “Ic=30uA VCE=20V Tj=100°C D.C. Current Gain HE 20 60] 40 120 Ic=10mA VcE=1V 10 20 Ic=10mA VcE=1V Tj=-B5°C 10 20 Ic=100mA VCE=2V Current Gain-Bandwidth Product | fr 400 500 MHz| Ic=10mA VCE=10V iCollector-Base Capacitance Ceb 4 4 | pF VcB=5V Ip=0 f£=1Miz Emitter-Base Capacitance Ceb 4.5 4.5 | pF Vep=1V Ic=0 f=1MHz Turn-On Time ton 12 12] nS Ic=10mA Vec=3V 1B1i=3mA 1 7] nS Ic=100mA Vec=6V {~~ Ip1=40mA Turn-Off Time toff 15 18 | nS Ic=10mA Vec=3V IB1=3mA -IBQ=1.5m4 18 21] nS Ic=100mA 1B1=40mA -IB2=20m Storage Time ts 10 13] nS Ic=10mA Vec=10V Ipi=-IBg=10mA fy 2-2. BMP