BSV15 COMSET | Alldatasheet
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PNP BSV15 – BSV16 – BSV17 09/11/2012 COMSET SEMICONDUCTORS 1 | 4 MMEEDDIIUUMM PPOOWWEERR TTRRAANNSSIISSTTOORRSS They are silicon transistors mounted in TO-39 metal package. They are intended for general industrial applications. High current and low voltage. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage IE = 0 BSV15 -40 V BSV16 -60 BSV17 -90 VCEO Collector-Emitter Voltage IB = 0 BSV15 -40 V BSV16 -60 BSV17 -90 VEBO Emitter-Base Voltage IC = 0 -5 V IC Collector Current -1 A ICM Peak Collector Current -2 A IBM Peak Base Current -0.2 A Ptot Total Power Dissipation @ Tcase= < 25° 0.8 W @ Tamb= < 25° 5 @ Tmb= < 50° 5 TJ Junction Temperature 200 °C TStg Storage Temperature Range -65 to +150 °C Tamb Operating Ambient Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-case 35 K/ W RthJ-amb Thermal Resistance, Junction-ambient in free air 220 K/ W RthJ-mb Thermal Resistance, Junction to mounting base 30 K/ W
PNP BSV15 – BSV16 – BSV17 12/11/2012 COMSET SEMICONDUCTORS 2/4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector – Cutoff Current IE= 0, VCB= -40 V BSV15 - - -100 nA IE= 0, VCB = -60 V BSV16 IE= 0, VCB = -80 V BSV17 IE= 0, V Tamb = 150°c VCB =-40 V BSV15 - - -50 µA VCB =-60 V BSV16 VCB =-80 V BSV17 IEBO Emitter – Cutoff Current IC= 0, VCE= -4V BSV15 - - -50 nA BSV16 BSV17 VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -500 mA, IB= -25 mA BSV15 - - -1 V BSV16 BSV17 VBE Base-Emitter Voltage (*) IC= -100 mA, VCE= -1V BSV15 - - -1 BSV16 BSV17 IC= -500 mA, VCE= -1V BSV15 - - -1 V BSV16 BSV17 hFE DC Current Gain (*) IC= -100 µA VCE= -1 V Gr.10 BSV15 20 75 - BSV16 BSV17 Gr.16 BSV15 30 120 - BSV16 IC= -100 mA VCE= -1 V Gr.10 BSV15 63 100 160 BSV16 BSV17 Gr.16 BSV15 100 160 250 BSV16 IC= -500 mA VCE= -1 V Gr.10 BSV15 25 55 - BSV16 BSV17 Gr.16 BSV15 35 85 - BSV16
PNP BSV15 – BSV16 – BSV17 12/11/2012 COMSET SEMICONDUCTORS 3/4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit fT Transition Frequency IC= -50 mA, VCE= -10 V f=100 MHz 50 - - MH Z CC Collector Capacitance IE= ie = 0, VCB= -10V f = 1 MHZ BSV15 - 20 30 pF BSV16 BSV17 - 15 25 CE Emitter Capacitance IE= ie = 0, VCB= -10V f = 1 MHZ - 180 - pF SWITCHING TIME Symbol Ratings Test Condition(s) Min Typ Max Unit toff Turn-off times IC= -100 mA IBon= -5 mA IBoff= 5 mA - - 650 ns ton Turn-on times - - 500 ns (*) Pulsed : pulse duration = 300µs, duty cycle = 1%
PNP BSV15 – BSV16 – BSV17 12/11/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO-39 Revised October 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. Da ta are subject to change without notice. Comset Se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. Comset Semicon ductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector