BST52 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
z Integrated Diode and Resistor
APPLICATIONS
z Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving MARKING:AS3 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E 90 V Collector-emitter sustain voltage V CES V BE =0,I C =100µA 80 V Collector cut-off current I CES V BE =0, V CE =80V 50 nA Emitter cut-off current I EBO V EB =4V,I C =0 50 nA V CE =10V, I C =150mA 1000 DC current gain h FE V CE =10V, I C =500mA 2000 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =0.5mA 1.3 V Base-emitter saturation voltage V BE(sat) I C =500mA,I B =0.5mA 1.9 V Transition frequency f T V CE =5V,I C =500mA, f=100MHz 200 MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage 90 V V CEO Collector-Emitter Voltage 80 V I C Collector Current 500 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ BST52 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu