BST39 HTSEMI | Alldatasheet
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- BASE 2. COLLECTOR 3. EMITTER
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z General Purpose Switching and Amplification MARKING:BCT39:AT1 BCT40:AT2 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BST39 400 Collector-base breakdown voltage V (BR)CBO I C =100µA,I E BST40 300 V BST39 350 Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B BST40 250 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V Collector cut-off current I CBO V CB =300V,I E =0 20 nA Emitter cut-off current I EBO V EB =5V,I C =0 100 nA DC current gain h FE V CE =10V, I C =20mA 40 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =4mA 0.5 V Transition frequency f T V CE =10V,I C =10mA, f=100MHz 70 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 2 pF Symbol Parameter Value Unit BST39 400 V CBO Collector-Base Voltage BST40 300 V BST39 350 V CEO Collector-Emitter Voltage BST40 250 V V EBO Emitter-Base Voltage 5 V I C Collector Current 100 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ BST39,BST40 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu