BST39 JIANGSU | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors BST39,BST40 TRANSISTOR (NPN)
FEATURES
APPLICATIONS
z General Purpose Switching and Amplification MARKING:BCT39:AT1 BCT40:AT2 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BST39 400 Collector-base breakdown voltage V (BR)CBO I C =100µA,I E BST40 300 V BST39 350 Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B BST40 250 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V Collector cut-off current I CBO V CB =300V,I E =0 20 nA Emitter cut-off current I EBO V EB =5V,I C =0 100 nA DC current gain h FE V CE =10V, I C =20mA 40 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =4mA 0.5 V Transition frequency f T V CE =10V,I C =10mA, f=100MHz 70 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 2 pF Symbol Parameter Value Unit BST39 400 V CBO Collector-Base Voltage BST40 300 V BST39 350 V CEO Collector-Emitter Voltage BST40 250 V V EBO Emitter-Base Voltage 5 V I C Collector Current 100 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Nov,2015
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 2 C,Nov,2015
www.cj-elec.com 3 C,Nov,2015