BSS84D DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — BSS84D Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-50V,ID=-0.18A,RDS(ON)<5Ω@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -50 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current- TA=25℃ -0.18 A Continuous Drain Current-TA=70℃ -0.14 Pulsed Drain Current1 -1.2 PD Power Dissipation 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 400 ℃/W A ll data sheet.com
www.doingter.cn — 2 — BSS84D Package Marking and Ordering Information： Part NO. Marking Package BSS84D SS844 SOT-363 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -50 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-50V --- --- μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -0.8 -1.3 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-0.15A --- 1.9 Ω VGS=-4.5V,ID= -0 .1A --- 2.2 Dynamic Characteristics Ciss Input Capacitance VDS=-30V, VGS=0V, f=1MHz --- 29.4 --- pF Coss Output Capacitance --- --- Crss Reverse Transfer Capacitance --- 1.2 --- Switching Characteristics td(on) Turn-On Delay Time VDS=-30V, ID=-0.1A, RGEN=3.3Ω, VGS=-10V --- 1.6 --- ns tr Rise Time --- 5.2 --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- 6.1 --- ns Qg Total Gate Charge VGS=-4.5V, VDS=-30V, ID=-0.18A --- 1.1 --- nC Qgs Gate-Source Charge --- 0.1 --- nC Qgd Gate-Drain “Miller” Charge --- 0.3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=10A --- --- -1.2 V ISD --- --- 0.18 A Source dr ain current(Body Diode) TA=2 Not es: ① P ulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. A ll data sheet.com