BSS38 MICRO-ELECTRONICS | Alldatasheet
Document overview
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Technical content
2 . a |
5 NPN |
TRANSISTOR | Sn ‘ “T0-92F
DESCRIPTION
BSS38 is PNP silicon planar transistor . i designed for high voltage video amplifiers in television receivers. ; | CEB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCEO 100V Collector-Base Voltage VCBO 120V Emitter-Base Voltage VEBO SV Collector Current IC 100mA Continuous Power Dissipation Pd 300mW Operating & Storage Junction Temperature Tj, Tstg -55 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) Collector-Emitter Breakdown Voltage | LVCEO | 100 Vv {IC=imA IB=0 Collector-Base Breakdown Voltage BVCBO | 120 Vv jiC=100nA IE=0 Emtter-Base Breakdown Voltage BVEBO 5 V HE=100nzA = IC=0 Collector Cutoff Current ICBO 200 nA |VCB=90W IE=0 Emitter Cutoff Current IEBO 100 nA |VEB=4V Ic=0 D.C. Current Gain HFE 20 IC=4mA VCE=1V Collector-Emitter Saturation Voltage | VCE(sat) 0.7 Vv IC=4mA IB=0.4mA 3 1C=50mA —s [B= 15mA Base-Emitter Saturation Voltage VBE(sat) 1.2 IC=4mA IB=0.4mA Current Gain Bandwidth Product fT 60 MHz |IC=4mA VCE=10V Output Capacitance Cob 4.5 pF |VCB=10V__f=I1MHz | ME MICRO ELECTRONICS LTD. LA, 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong De