BSS138 E-CMOS | Alldatasheet

Document overview

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Technical content

PACKAGE MARKING AND ORDERING INFORMATION ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) THERMAL CHARACTERISTICS GENERAL FEATURES

  • VDS = 50V,ID = 0.22A
  • RDS(ON) < 6Ω @ VGS=4.5V
  • RDS(ON) < 3.5Ω @ VGS=10V
  • ESD Rating：1000V HBM
  • High Power and current handing capability
  • Halogen Free product is acquired
  • Surface Mount Package

Applications

  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
  • Battery Operated Systems
  • Solid-State Relays Device Marking Device Device Package Reel Size Tape width Quantity S138 BSS138-HF SOT-23 Ø 180mm 8 mm 3000 units Parameter Symbol Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID 0.22 A ID(70℃) 0.18 IDM 0.88 A Maximum Power Dissipation PD 0.43 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Parameter Symbol Limit Unit Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 ℃/W RθJA 350 ℃/W

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 50 V Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V 10 uA Gate-Source Breakdown Voltage BVGSO VDS=0V, IG=±250uA ±20 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.8 1.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.22A 3.5 Ω VGS=4.5V, ID=0.22A 6 Forward Transconductance gFS VDS=10V,ID=0.22A 0.1 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=25V,VGS=0V, F=1.0MHz PF Output Capacitance Coss 15 Reverse Transfer Capacitance Crss 6 SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDD=30V,VGS=10V, RGEN=6Ω，ID=0.22A 2.6 nS Turn–On Rise Time tr 9 Turn-Off Delay Time td(off) 20 Turn–Off Fall Time tf 6 Total Gate Charge Qg VDS=25V,ID=0.22A,VGS=10V 1.7 2.4 nC Gate–Source Charge Qgs 0.1 Gate–Drain Charge Qgd 0.4 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.44A 1.4 V

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

Package Information

Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

SOT 23 Tape and Reel Information NOTES： 1.All dimensions are in millimeters. 2.10 Sprocket hole pitch cumulative tolerance ±0.20MAX 3.General tolerance ±0.25