BSS123BKN3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • ESD protected gate • Easily designed drive circuits
  • High speed switching • Low-voltage drive
  • Pb-free lead plating and halogen-free package • Easy to use in parallel Symbol Outline BSS123BKN3

Ordering Information

G G：Gate S：Source D：Drain S S G Device Package Shipping SOT-23 3000 pcs / tape & reel BSS123BKN3-0-T1-G (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 2/9 BSS123BKN3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 100 Gate-Source V oltage VGSS ±20 V Continuous Drain Current @VGS=10V , TA=25°C 190 Continuous Drain Current @VGS=10V , TA=70°C ID 152 Pulsed Drain Current IDM 760 *1 mA Total Power Dissipation PD 300 *2 mW Operating Junction Temperature Range Tj -55~+150 Storage Temperature Range Tstg -55~+150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Ambient RθJA 416 *2 °C/W Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* 100 - - VGS=0V , ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±16V , VDS=0V - - 1 VDS=80V , VGS=0V IDSS - - 5 μA VDS=80V , VGS=0V , Tj=55°C GFS 100 - - mS VDS=10V, ID=100mA Dynamic Ciss - 26 39 Coss - 11 16 Crss - 3.1 4.6 pF VDS=25V , VGS=0V , f=1MHz *tr - 4.2 6.3 *td - 15.2 22.8 *tstg - 10.2 15.3 *tf - 18.8 28.2 ns VDS=50V , ID=0.26A, VGS=10V , RG=6Ω *Qg - 1.85 2.8 *Qgs - 0.72 1.1 *Qgd - 0.17 0.26 nC VDS=80V , ID=0.26A, VGS=10V Body Diode *VSD - 0.9 1.3 V IS=0.34A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 3/9 BSS123BKN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456789 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V ,8V,7V,6V,5V,4.5V,4V VGS=3.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0246 8 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=100mA RDS( ON)@Tj=25°C:2.8Ω typ. VGS=4.5V, ID=100mA RDS(ON)@Tj=25°C : 3.0Ω typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(Ω) ID=100mA

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 4/9 BSS123BKN3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V Gate Charge Characteristics 0 1/5 2/5 3/5 4/5 1 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=0.26A VDS=80V VDS=20V Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=416°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Junction Temperature 0.05 0.1 0.15 0.2 0.25 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=10V, RθJA=416°C/W

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 5/9 BSS123BKN3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=416°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=416°C/W

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 6/9 BSS123BKN3 CYStek Product Specification Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 7/9 BSS123BKN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 8/9 BSS123BKN3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 9/9 BSS123BKN3 CYStek Product Specification SOT-23 Dimension Marking: Style : Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 123BK *:Typical Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.