BSS123

BSS123 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET FEATURE SOT-23  Surface Mount Package  High Density Cell Design for Extremely Low R DS(ON)  Voltage Controlled Small Signal Switch  Rugged and Reliable APPLICATION  S m a l l S e r v o M o t o r C o n t r o l s  P o w e r M O S F E T G a t e D r i v e r s  Switching Application ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit N-MOSFET Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (note 1) I D 0.17 A Pulsed Drain Current (tp=10us) I DM 0.68 A Continous Source-Drain Diode Current I S 0.17 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient (note 1) R θJA 357 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~ +150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ MARKING Equivalent Circuit V (BR)DSS R DS(on) MAX I D 100 V 6Ω@10V 0.17A Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN /g90/g90/g90/g17/g70/g77/g16/g72/g79/g72/g70/g17/g70/g82/g80/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g31/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3A-2,Apr,2015

st Condition Min Typ Max Unit STATIC CH ARACTERISTICS Drain-source b reakdown voltage V (BR)DSS VGS = 0V, ID =250µA 100 V Zero gate volta ge drain current IDSS VDS =100V,VGS = 0V 1 µA VDS =20V,VGS = 0V 10 nA Gate-body leakage curr ent IGSS VGS =±20V, VDS = 0V ±50 nA Gate threshold voltage (n ote 2) V GS(th) VDS =VGS, ID =250µA 1 2.8 V Drain-source o n-resistance(note 2) R DS(on) VGS =4.5V, ID =0.17A 10 Ω VGS =10V, ID =0.17A 6 Ω Forw ard tranconductance(note 2) g FS VDS =10V, ID =170mA 80 mS Diode forw ard voltage V SD I S=340mA, VGS = 0V 1.3 V DYNAMI C CHARACTERISTICS (note 4) Input Capacitance Ciss VDS =25V,VGS =0V,f =1MHz 29 60 pF Output Capacitance Coss 10 15 pF Reverse Transfer Capac itance Crss 2 6 pF SWITCHING CHAR ACTERISTICS (note 3,4) Turn-on delay time td(on) VGS=10V,VDD=30V, ID=2.8A,RGEN=50Ω 8 ns Turn-on rise time tr 8 ns Turn-off delay t ime td(off ) 13 ns Turn-off fall time tf 16 ns Total Gate Charge Qg VDS=10V,ID=0.22A, VGS=10V 1.4 2 nC Gate-Source Charge Qgs 0.15 0.25 nC Gate-Drain Charge Qgd 0.2 0.4 nC Notes : 1.Surface mou nted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a www.cj-elec.com 2 A-2,Apr,2015

50 100 150 200 250 300 350 0123456789 1 0 100 150 200 250 300 350 400 450 25 50 75 100 125 1.0 1.2 1.4 1.6 1.8 2.0 Pulsed Pulsed Ta=100℃ VSDIS —— Ta=25℃ SOURCE CURRENT IS (mA) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=3V VGS=2.5V VGS=2V VGS=4V,5V,6V Output Characteristics DRAIN CURRENT ID (mA) DRAIN TO SOURCE VOLTAGE VDS (V) Ta=25℃ Pulsed VGS=10V VGS=4.5V Ta=25℃ Pulsed ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (mA) ID——RDS(ON) Ta=100℃ Ta=25℃ ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGE VGS (V) VGS——RDS(ON) ID=0.17A VDS=3V Pulsed DRAIN CURRENT ID (mA) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics Ta=100℃Ta=25℃ ID=250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE Tj ( )℃ 7\\SLFDO&KDUDFWHULVWLFV www.cj-elec.com 3 A-2,Apr,2015

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 4 A-2,Apr,2015

www.cj-elec.com 5 A-2,Apr,2015 SOT-23 Tape and reel 1000 500 2000 1500 2500 3000 G H I D REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg) 3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220 SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer SOT-23 Reel Pkg type SOT-23 Dimensions are in millimeter A B C d E F P0 P P1 W Reel Option 7''Dia Dimensions are in millimeter D D1 D2 G H I W1 W2 Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). P1P0 P F W E A d A A Trailer Tape Leader Tape 50±2 Empty Pockets 100±2 Empty PocketsComponents B C A-A