BSS123 FOSHAN | Alldatasheet

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Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 极低的 RDS(ON)为高密度电池设计。 High density cell design for extremely low RDS(ON). 适用于作负载开关或脉宽调制应用。 This device is suitable for use as a load switch or in PWM applications. 内部等效电路 / Equivalent Circuit PIN1：S PIN 2 ：G PIN 3 ：D 印章代码 / M a r k i n g 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 引脚排列 / P i n n i n g Marking HSA

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Drain-Source Voltage V DSS 100 V Drain Current – Continuous I D 170 mA Drain Current– Pulsed ID(TC=25℃) 680 mA Continuous Drain–Source IS 170 mA Gate-Source Voltage VGS ±20 V Power Dissipation P D 0.36 W Thermal Resistance, Junction-to-Ambient RθJA 350 ℃/W Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Drain–Source Breakdown Voltage BVDSS VGS=0V I D=250μA 100 V Zero Gate Voltage Drain Current IDSS(1) V DS=100V S=0V 1.0 μA IDSS(2) VDS=100V V GS=0V Tj=125℃ 60 μA IDSS(3) V DS=20V V GS=0V 10 nA Gate–Body Leakage. I GSS V GS=±20 V DS=0V ±50 nA On–State Drain Current I D(on) V DS=5.0V V GS=10V 0.68 A Gate Threshold Voltage V GS(th) V DS=VGS ID=1.0mA 0.8 1.7 2.0 V Static Drain–Source On–Resistance RDS(on)(1) VGS=10V I D=0.17A 1.2 6.0 Ω RDS(on)(2) VGS=4.5V I D=0.17A 1.3 10 Ω RDS(on)(3) VGS=10V I D=0.17A Tj=125℃ 2.2 12 Ω Forward Transconductance g FS VDS=10V I D=0.17A 0.08 0.8 S Drain–Source Diode Forward Voltage VSD V GS=0V I S=0.34A 0.8 1.3 V Input Capacitance C iss VDS=25V V GS=0V f=1.0MHz 73 pF Output Capacitance C oss 7 pF Reverse Transfer Capacitance C rss 3.4 pF Turn–On Delay Time t d(on) ID=0.28A V GS=10V VDD=30V R G=6.0Ω 1.7 3.4 ns Turn–On Rise Time t r 9 18 ns Turn–Off Delay Time t d(off) 17 31 ns Turn–Off Fall Time t f 2.4 5.0 ns 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： H： 为公司代码 SA： 为型号代码 Note: H: Company Code. SA: Product Type. HSA

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260 ±5℃ Time:10 ±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 SOT-23 3,000 10 30,000 8 240,000 7〞×8 180×120×180 385×257×392 使用说明 / N o t i c e s