BSR43 HTSEMI | Alldatasheet
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- BASE 2. COLLECTOR 3. EMITTER
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z Thick and Thin-Film Circuits z Telephony and General Industrial Applications MARKING:AR4 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 90 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 80 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V Collector cut-off current I CBO V CB =60V,I E =0 100 nA Emitter cut-off current I EBO V EB =5V,I C =0 100 nA h FE(1) * V CE =5V, I C =0.1mA 30 h FE(2) * V CE =5V, I C =100mA 100 300 DC current gain h FE(3) * V CE =5V, I C =500mA 50 I C =150mA,I B =15mA 0.25 V Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 0.5 V I C =150mA,I B =15mA 1 V Base-emitter saturation voltage V BE(sat) I C =500mA,I B =50mA 1.2 V Transition frequency f T V CE =10V,I C =50mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 12 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 90 pF *Pulse test Symbol Parameter Value Unit V CBO Collector-Base Voltage 90 V V CEO Collector-Emitter Voltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1 A P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ BRS43 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu