BSR40 HOTTECH | Alldatasheet

Document overview

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Technical content

FEATURES

z High current(max.1A) z Low voltage(max.80V) z Thick and thin-film circuits. z Telephony and general industrial applications. z NPN complements:BSR30,BSR31 and BSR33.

ORDERING INFORMATION

T y p e N o . M a r k i n g P a c k a g e C o d e B S R 4 0 A R 1 S O T - 8 9 B S R 4 1 A R 2 S O T - 8 9 B S R 4 2 A R 3 S O T - 8 9 B S R 4 3 A R 4 S O T - 8 9 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit V CBO Collector-Base Voltage BSR40 BSR41 B S R 4 2 B S R 4 3 90 V V CEO Collector-Emitter Voltage BSR40 BSR41 B R S 4 2 B S R 4 3 80 V V EBO Emitter-Base Voltage 5 V I C DC Collector Current 1 A I CM Peak Collector Current 2 A I BM Peak base current 0.2 A P tot Total power dissipation,T S =130℃ 1.35 W T T stg Junction and Storage Temperature -65 to+150 ℃ TRANSISTOR ( NPN) SOT-89 BASE COLLECTOR EMITTER Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT V CB =60V I E =0 100 nA Collector cut-off current I CBO V CB =60V I E =0,T A =150℃ 50 μA Emitter-base cut-off current I EBO V CE =5V I C =0A 100 nA V CE =5V I C =100uA BSR40;BSR42 B S R 4 1 ; B S R 4 3 V CE =5V I C =100mA BSR40;BSR42 B S R 4 1 ; B S R 4 3 100 120 300 DC current gain h FE V CE =5V I C =500mA BSR40;BSR42 B S R 4 1 ; B S R 4 3 Collector-emitter saturation voltage V CE(sat) I C =150mA I B =15mA I C =500mA I B =50mA 0.25 0.5 V Base-emitter saturation voltage V BE(sat) I C =150mA I B =15mA I C =500mA I B =50mA 1 1.2 V Collector capacitance C c I E e =0A,V CB =10V f=1MHz 12 pF Emitter capacitance C e I C c =0A,V EB =10V f=1MHz 90 pF Transition frequency f T V CE =10V, I C =50mA, f=100MHz 100 MHz Turn-on time t on 250 Ns Turn-off time t on I Con =100mA;I Bon =5mA;I Bon =-5mA 1 us BSR40/BSR41/BSR42/BSR43 TRANSISTOR ( NPN) Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.