BSR33 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
MARKING:BR4 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100µA,I E =0 -90 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -80 V Emitter-base breakdown voltage V (BR)EBO I E =-100µA,I C =0 -5 V Collector cut-off current I CBO V CB =-60V,I E =0 -100 nA Emitter cut-off current I EBO V EB =-5V,I C =0 -100 nA h FE(1) * V CE =-5V, I C =0.1mA 30 h FE(2) * V CE =-5V, I C =-100mA 100 300 DC current gain h FE(3) * V CE =-5V, I C =-500mA 50 I C =-150mA,I B =-15mA -0.25 V Collector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -0.5 V I C =-150mA,I B =-15mA -1 V Base-emitter saturation voltage V BE(sat) I C =-500mA,I B =-50mA -1.2 V Transition frequency f T V CE =-10V,I C =-50mA, f=100MHz 100 MHz *Pulse test Symbol Parameter Value Unit V CBO Collector-Base Voltage -90 V V CEO Collector-Emitter Voltage -80 V V EBO Emitter-Base Voltage -5 V I C Collector Current -1 A P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ BRS33 TRANSISTOR (PNP) Date:2011/05 www.htsemi.comsemiconductor JinYu