BSP75N INFINEON | Alldatasheet
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Technical content
Features
- Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation Application All kinds of resistive, inductive and capacitive loads in switching applications µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type Ordering Code Package HITFET/Ge2 BSP 75N Q67060-S7215 P-SOT223-4 Product Summary Parameter Symbol Value Unit Continuous drain source voltage VDS 60 V On-state resistance RDS(ON) 550 m Ω Current limitation ID(lim) 1A Nominal load current ID(Nom) 0.7 A Clamping energy EAS 550 mJ
Data Sheet V1.0 2 2003-01-10 Figure 1 Block Diagram Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1I N Input; activates output and supplies internal logic
2 DRAIN Output to the load
3 + TAB SOURCE Ground; pin3 and TAB are internally connected HITFET Logic OUTPUT Stage Over voltage Protection IN DRAIN Vbb dV/dt limitation SOURCE ESD Short circuit Protection Current Limitation Over temperature Protection M TAB IN DRAIN SOURCE SOURCE
Data Sheet V1.0 3 2003-01-10 HITFET/Ge2 BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. 60V) when inductive loads are switched off. Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the over temperature threshold is reached. Over temperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Over temperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatic restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings).
Data Sheet V1.0 4 2003-01-10 Absolute Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit Remarks Continuous drain source voltage 1) VDS 60 V – Drain source voltage for short circuit protection VDS 36 V – Continuous input voltage VIN -0.2 … +10 V – Peak input voltage VIN -0.2 … +20 V – Continuous Input Current -0.2V ≤ VIN ≤ 10V VIN<-0.2V or VIN>10V IIN no limit | IIN |≤ 2mA mA – Operating temperature range Storage temperature range Tj Tstg -40 … +150 -55 … +150 Power dissipation (DC) Ptot 1.8 W – Unclamped single pulse inductive energy EAS 550 mJ ID(ISO) = 0.7 A; Vbb =32V Load dump protection 2) IN = low or high (8 V); RL = 50 Ω IN = high (8 V); RL = 22 Ω VLoadDump V VLoadDump = VP + VS; VP = 13.5 V RI 3) = 2 Ω; td = 400 ms; Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 4000 V – DIN humidity category, DIN 40 040 – E – – IEC climatic category, DIN IEC 68-1 – 40/150/56 – – Thermal Resistance Junction soldering point RthJS ≤ 10 K/W – Junction - ambient4) RthJA ≤ 70 K/W – 1) See also Figure 7 and Figure 10. 2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7. 3) RI = internal resistance of the load dump test pulse generator LD200. 4) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.
Data Sheet V1.0 5 2003-01-10 HITFET/Ge2 BSP 75N
Electrical Characteristics
Tj = 25 °C, unless otherwise specified Parameter Sym- bol Limit Values Unit Test Conditions min. typ. max. Static Characteristics Drain source clamp voltage VDS(AZ) 60 – 75 V ID = 10 mA, Tj = -40 … +150 °C Off state drain current IDSS –– 5 µA VIN = 0 V, VDS = 32 V, Tj = -40 … +150 °C Input threshold voltage VIN(th) 11 . 8 2 . 5 V ID = 10 mA Input current: normal operation, ID < ID(lim): current limitation mode, ID = ID(lim): After thermal shutdown, ID = 0 A: IIN(1) IIN(2) IIN(3) 1000 100 250 1500 200 400 2000 µA VIN = 5 V On-state resistance Tj = 25 °C Tj = 150 °C RDS(on) 490 850 675 1350 mΩ ID = 0.7 A, VIN = 5 V On-state resistance Tj = 25 °C Tj = 150 °C RDS(on) 430 750 550 1000 mΩ ID = 0.7 A, VIN = 10 V Nominal load current ID(Nom) 0.7 –– A VBB = 12 V, VDS = 0.5 V, TS = 85 °C, Tj < 150 °C Current limit ID(lim) 11 . 5 1 . 9 A VIN = 10 V, VDS = 12 V Dynamic Characteristics 1) Turn-on time VIN to 90% ID: ton – 10 20 µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V Turn-off time VIN to 10% ID: toff – 10 20 µs RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V
Data Sheet V1.0 6 2003-01-10 Slew rate on 70 to 50% VBB:- d VDS/ dton – 51 0 V / µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V Slew rate off 50 to 70% VBB:d VDS/ dtoff – 10 15 V/ µs RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V Protection Functions2) Thermal overload trip temperature Tjt 150 165 180 °C – Thermal hysteresis ∆Tjt – 10 – Κ – Unclamped single pulse inductive energy Tj = 25 °C Tj = 150 °C EAS 550 200 mJ ID(ISO) = 0.7 A, VBB = 32 V Inverse Diode Continuous source drain voltage VSD – 1 – V VIN = 0 V, -ID = 2 × 0.7 A 1) See also Figure 9. 2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation. Electrical Characteristics (cont’d) Tj = 25 °C, unless otherwise specified Parameter Sym- bol Limit Values Unit Test Conditions min. typ. max.
Data Sheet V1.0 7 2003-01-10 HITFET/Ge2 BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Symbol Value Unit Remark Temperature T A 23 ±5 °C – Supply Voltage VS 13.5 V – Load RL 27 Ω ohmic Operation mode PWM DC fINx=100Hz, D=0.5 ON / OFF DUT specific VIN(’HIGH’)=5V Fast electrical transients acc. to ISO 7637 Test1) Pulse 1) The test pulses are applied at VS Max. Test Level Test Result Pulse Cycle Time and Generator Impedance ON OFF 1 -200V C C 500ms ; 10 Ω 2 +200V C C 500ms ; 10 Ω 3a -200V C C 100ms ; 50 Ω 3b +200V C C 100ms ; 50 Ω 4 -7V C C 0.01 Ω 5 175V E(65V) E(75V) 400ms ; 2 Ω Definition of functional status Class Content C All functions of the device are performed as designed after exposure to disturbance. E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit.
Data Sheet V1.0 8 2003-01-10 Figure 3 Test circuit for ISO pulse Conducted Emissions Acc. IEC 61967-4 (1Ω/150Ω method) Typ. Vbb Emissions at PWM-mode with 150Ω-matching network Figure 4 Test circuit for conducted emission 1) Conducted Susceptibility Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT Typ. Vbb Susceptibility at DC-ON/OFF and at PWM Test circuit for conducted susceptibility BSP75N SOURCE DRAININ VBB RL PULSE -20 -10 100 0,1 1 10 100 1000 f / MHz dBµV Noise level BSP75N 150ohm Class6 150ohm Class1 150Ω / 8-H 150Ω / 13-N 150ΩΩΩΩ-Network BSP75N SOURCE DRAININ VBB RL 1) For defined de coupling and high reproducibility a defined choke (5 µH at 1MHz) is inserted in the Vbb-Line. 2) Broadband Artificial Network (short: BAN) consists of the same choke (5 µH at 1MHz) and the same
150 Ohm-matching network as for emission
measurement for defined de coupling and high reproducibility. 1 10 100 1000 f / MHz dBm Limit OUT, ON OUT, OFF OUT, PWM HF BSP75N SOURCE DRAININ VBB RL B A N
Data Sheet V1.0 11 2003-01-10 1 Max. allowable power dissipation Ptot = f(TAmb)
3 On-state resistance RON = f(Tj);
ID = 0.7 A; VIN = 5 V
2 On-state resistance RON = f(Tj);
ID = 0.7 A; VIN = 10 V 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V 0,4 0,8 1,2 1,6 0 25 50 75 100 125 150 P tot W T Amb max. 200 400 600 800 1000 1200 1400 -50 -25 0 25 50 75 100 125 150 R ON m Ω T j max. typ. 100 200 300 400 500 600 700 800 900 1000 -50 -25 0 25 50 75 100 125 150 R ON m Ω T j max. typ. 0,5 1,5 2,5 -50 -25 0 25 50 75 100 125 150 V IN(th) V T j typ.
Data Sheet V1.0 12 2003-01-10 5 Typ. on-state resistance RON = f(VIN); ID = 0.7 A; Tj = 25 °C 7 Typ. short circuit current ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C 6 Typ. current limitation ID(lim) = f(Tj); VDS = 12 V, VIN = 10 V 8 Max. transient thermal impedance ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T 500 1000 1500 2000 02468 1 0 V IN V typ. R ON m Ω 0,5 1,5 02468 1 0 I D(SC) A V IN V typ. 0,5 1,5 -50 -25 0 25 50 75 100 125 150 I D(lim) A T j typ. 0,1 100 0,00001 0,001 0,1 10 1000 10000 0 0.01 0.02 0.05 0.1 0.2 0.5 Z th(JA) K/W t P s
Data Sheet V1.0 13 2003-01-10 HITFET/Ge2 BSP 75N Package Outlines ±0.1 ±0.2 ±0.10.7 321 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25 P-SOT223-4 (Small Outline Transistor) GPS05560 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mmSMD = Surface Mounted Device
Data Sheet V1.0 14 2003-01-10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.