BSP50 INFINEON | Alldatasheet
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Technical content
BSP50 ... BSP52
1 Nov-30-2001
NPN Silicon Darlington Transistors /G01 High collector current /G01 Low collector-emitter saturation voltage /G01 Complementary types: BSP60 ... BSP62 (PNP) VPS051631 Type Marking Pin Configuration Package BSP50 BSP51 BSP52 BSP 50 BSP 51 BSP 52 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol BSP50 BSP51 BSP52 Unit Collector-emitter voltage VCEO 45 60 80 V Collector-base voltage VCBO 60 80 90 Emitter-base voltage VEBO 5 5 5 DC collector current IC 1 A Peak collector current ICM 2 Base current mA100IB Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BSP50 ... BSP52
2 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless othertwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSP50 BSP51 BSP52 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 BSP50 BSP51 BSP52 V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector-emitter cutoff current VCE = VCEOmax, VBE = 0 ICES - - 10 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 10 DC current gain 1) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE 1000 2000 Collector-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VCEsat 1.3 1.8 V Base-emitter saturation voltage 1) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VBEsat 1.9 2.2 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Turn-on time IC = 500 mA, IB1 = IB2 = 0.5mA t(on) - 400 - ns Turn-off time IC = 500 mA, IB1 = IB2 = 0.5mA t(off) - 1500 - 1) Pulse test: t ≤ 300µs, D = 2%
BSP50 ... BSP52
3 Nov-30-2001
Switching time test circuit Switching time waveform 1) Pulse test: t ≤ 300µs, D = 2%
BSP50 ... BSP52
4 Nov-30-2001
External resistance RBE = f (TA) VCB = VCEmax RBEmax for thermal stability EHP00660BSP 50...52 05 0 ˚C R A 150 100 BE 105 T Ω Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 150 300 450 600 750 900 1050 1200 1350 mW 1650 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00943BSP 50...52 010 D = 101 102 310 10-5 10-4 10-3 10-2 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10-1 s 5totmax totP DC P pt tp =D T tp T DC current gain hFE = f (IC) VCE = 10V EHP00661BSP 50...52 10 mA FE 102 103 104 1 10 2 10 3 10 4 ΙC h
BSP50 ... BSP52
5 Nov-30-2001
Collector-emitter saturation voltage IC = f (VCEsat), IB - parameter EHP00663BSP 50...52 101 Ι 210 C 103 mA V CE satV 0 12 BΙ = 0.5 mA 4 mA Base-emitter saturation voltage IC = f (VBEsat), IB - parameter EHP00664BSP 50...52 101 Ι 102 C mA BE satV
2 V 3
= 0.5 mABΙ 4 mA Transition frequency fT = f (IC) VCE = 5V, f = 100MHz EHP00662BSP 50...52 10 mA f C MHz T Ι 12 3 101