BSP50_07 INFINEON | Alldatasheet

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Technical content

NPN Silicon Darlington Transistors

  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BSP60 - BSP52 (PNP)
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP50 BSP51 BSP52 BSP50 BSP51 BSP52 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BSP50 BSP51 BSP52 VCEO V Collector-base voltage BSP50 BSP51 BSP52 VCBO Emitter-base voltage VEBO 5 Collector current IC 1 A Peak collector current ICM 2 Base current IB 100 mA Total power dissipation- TS ≤ 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 17 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector-emitter cutoff current VCE = VCE0max, VBE = 0 ICES - - 10 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 10 µA DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE 1000 2000 Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VCEsat 1.3 1.8 V Base emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 mA, IB = 1 A VBEsat 1.9 2.2 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2%

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Tum-on time IC = 500 mA, IB1 = IB2 = 0.5 mA t(on) - 400 - ns Tum-off time IC = 500 mA, IB1 = IB2 = 0.5 mA t(off) - 1500 -

Switching time test circuit Switching time waveform

DC current gain hFE = ƒ(IC) VCE = 10 V EHP00661BSP 50...52 10 mA FE 102 103 104 1 10 2 10 3 10 4 ΙC h Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter EHP00663BSP 50...52 101 Ι 210 C 103 mA V CE satV 0 12 BΙ = 0.5 mA 4 mA Base-emitter saturation voltage IC = ƒ(VBEsat), IB = Parameter EHP00664BSP 50...52 101 Ι 102 C mA BE satV

2 V 3

= 0.5 mABΙ 4 mA Transition frequency fT = ƒ(IC) VCE = 5 V, f = 100 MHz EHP00662BSP 50...52 10 mA f C MHz T Ι 12 3 101

Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB(VEB) pF CCB(CEB) CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 150 300 450 600 750 900 1050 1200 1350 mW 1650 Ptot Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) EHP00943BSP 50...52 010 D = 101 102 310 10-5 10-4 10-3 10-2 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10-1 s 5totmax totP DC P pt tp =D T tp T External resistance RBE = ƒ (TA) VCB = VCEmax RBEmax for thermal stability EHP00660BSP 50...52 05 0 ˚C R A 150 100 BE 105 T Ω

Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 12 3 ±0.1 ±0.04 0.5 MIN. 0.28 0.1 MAX. 15˚ MAX. 6.5±0.2 A 4.6 2.30.7±0.1

0.25 M A

1.6±0.1 7±0.3 B0.25 M ±0.23.5 B 3.5 1.4 4.8 1.4 1.11.2 8 0.3 MAX. 6.8 7.55 1.75Pin 1 Manufacturer 0...10˚

81726 München, Germany

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