BSP300

BSP300_08 INFINEON | Alldatasheet

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Technical content

Rev 2.0 Page 1 2008-03-26 BSP300 SIPMOS ® Small-Signal Transistor

• N channel  Enhancement mode  Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP300 800 V 0.19 A 20 Ω PG-SOT223 BSP300 Type RoHS compliant Tape and Reel Information Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID 0.19 A DC drain current, pulsed TA = 25 °C IDpuls 0.76 Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C EAS mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W Pb-free lead plating; RoHS compliant • BSP300 Yes L6327
• Qualified according to AEC Q101 Packaging Dry

Rev 2.0 Page 2 2008-03-26 BSP300 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) RthJS ≤ 14 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, atTj= 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 800 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 2 3 4 Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.19 A RDS(on) - 15 20 Ω

Electrical Characteristics, atTj= 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 *ID * RDS(on)max,ID = 0.19 A gfs 0.06 0.27 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 170 230 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 20 30 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 10 15 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω td(on) - 7 1 1 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω tr - 16 24 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω td(off) - 27 36 Fall time VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω tf - 21 28 Rev 2.0 Page 3 2008-03-26

Electrical Characteristics, atTj= 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.19 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 0.76 Inverse diode forward voltage VGS = 0 V, IF = 0.38 A, Tj = 25 °C VSD - 1 1.4 V Reverse recovery time VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs trr - 95 - ns Reverse recovery charge VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Qrr - 0.25 - µC Rev 2.0 Page 4 2008-03-26

Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 ID Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C -310 -210 -110 010 A ID 10 0 10 1 10 2 10 3V VDS RDS(on) VDS / ID DC 10 ms 1 ms tp = 760.0µs Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -510 -410 -310 -210 -110 010 110 210 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Rev 2.0 Page 5 2008-03-26

Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0 4 8 12 16 V 24 VDS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 A 0.45 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 2W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C ID Ω RDS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 Typ. transfer characteristics ID = f(VGS ) parameter:tp = 80 µs VDS ≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1.0 ID Typ. forward transconductancegfs = f (ID ) parameter:tp = 80 µs, VDS ≥2 x ID x RDS(on)max ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 S 0.50 gfs RevRev 1.0 Page 1 2005-10-27 2008-03-26612.0

Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.19 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω RDS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 VGS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V,f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 010 110 210 310 pF C Crss Coss Ciss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -310 -210 -110 010 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) Rev 2.0 Page 7 2008-03-26

Avalanche energy EAS = ƒ(Tj) parameter: ID = 0.8 A, VDD = 50 V RGS = 25 Ω, L = 105 mH 20 40 60 80 100 120 °C 160 Tj mJ EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 720 740 760 780 800 820 840 860 880 900 920 V 960 V(BR)DSS Rev 2.0 Page 8 2008-03-26

Rev 2.0 Page 9 2008-03-26 B SP300