BSP295 INFINEON | Alldatasheet
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Data Sheet 1 05.99 SIPMOS ® Small-Signal Transistor
- N channel Enhancement mode Logic Level Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 295 50 V 1.8 A 0.3 Ω SOT-223 BSP 295 Type Ordering Code Tape and Reel Information BSP 295 Q67000-S066 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V Drain-gate voltage RGS = 20 kΩ VDGR Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current TA = 34 ˚C ID 1.8 A DC drain current, pulsed TA = 25 ˚C IDpuls 7.2 Power dissipation TA = 25 ˚C Ptot 1.8 W BSP 295
Data Sheet 2 05.99 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V(BR)DSS 50 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 0.8 1.4 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IDSS 0.1 100 1 µA nA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 1.8 A VGS = 4.5 V, ID = 1.8 A RDS(on) 0.45 0.25 0.5 0.3 Ω
Data Sheet 3 05.99 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A gfs 0.5 1.7 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 320 425 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 110 170 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 50 75 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω td(on) - 8 1 2 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω tr - 20 30 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω td(off) - 120 160 Fall time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω tf - 85 115
Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS - - 1.8 A Inverse diode direct current,pulsed TA = 25 ˚C ISM - - 7.2 Inverse diode forward voltage VGS = 0 V, IF = 3.6 A, Tj = 25 ˚C VSD - 1.1 1.5 V
Data Sheet 5 05.99 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 A 1.9 ID Safe operating area ID=f(VDS) parameter : D = 0, TC=25˚C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJA s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
Data Sheet 6 05.99 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C VDS 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 A 4.0 ID VGS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 2W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C ID 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ω 0.9 RDS (on) VGS [V] = a 2.0 VGS [V] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 A 4.5 ID Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 S 2.2 gfs
Data Sheet 7 05.99 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 1.8 A, VGS = 10 V -60 -20 20 60 100 ˚C 160 Tj 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 Ω 0.75 RDS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 VGS(th) -60 -20 20 60 100 ˚C 160 Tj typ 98% Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 0 10 1 10 2 10 3 10 pF C Crss Coss Ciss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A IF VSD Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C typ Tj = 150 ˚C (98%)
Data Sheet 8 05.99 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 ˚C 160 Tj V V(BR)DSS Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C