BSP129L6327HTSA1

BSP129L6327HTSA1 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• N-channel
• Depletion mode
• dv /dt rated
• Available with V GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.35 A T A=70 °C 0.28 Pulsed drain current I D,pulse T A=25 °C 1.4 Reverse diode dv /dt dv /dt I D=0.36 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD class (JESD22-A114-HBM) 1A(>250V,<500V) Power dissipation P tot T A=25 °C 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Value VDS 240 V RDS(on),max 6 W IDSS,min 0.05 A Product Summary PG-SOT223 Type Package Tape and Reel Marking Packaging BSP129 PG-SOT223 L6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 L6906: 1000 pcs/reel soed BSP129 Non dry Type Package Tape and Reel Marking Packaging BSP129 PG-SOT223 H6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 H6906: 1000 pcs/reel sorted in VGS(th) bands 1) BSP129 Non dry Rev. 1.42 page 1 2012-11-29
• Halogen­free according to IEC61249­2­21

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS - - 25 K/W SMD version, device on PCB R thJA minimal footprint - - 115 6 cm2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 240 - - V Gate threshold voltage V GS(th) V DS=3 V, I D=108 µA -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=240 V, V GS=-3 V, T j=25 °C - - 0.1 µA V DS=240 V, V GS=-3 V, T j=125 °C - - 10 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 50 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=25 mA - 6.5 20 W V GS=10 V, I D=0.35 A - 4.2 6.0 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.28 A 0.18 0.36 - S Threshold voltage V GS(th) sorted in bands3) J V GS(th) V DS=3 V, I D=108 µA -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Values 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for Rev. 1.42 page 2 2012-11-29

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 82 108 pF Output capacitance C oss - 12 16 Reverse transfer capacitance Crss - 6 10 Turn-on delay time t d(on) - 4.4 6.6 ns Rise time t r - 4.1 6.2 Turn-off delay time t d(off) - 22 33 Fall time t f - 35 53 Gate Charge Characteristics Gate to source charge Q gs - 0.24 0.36 nC Gate to drain charge Q gd - 1.7 2.6 Gate charge total Q g - 3.8 5.7 Gate plateau voltage V plateau - 0.37 - V Reverse Diode Diode continous forward current I S - - 0.35 A Diode pulse current I S,pulse - - 1.4 Diode forward voltage V SD V GS=-3 V, I F=0.35 A, T j=25 °C - 0.79 1.2 V Reverse recovery time t rr - 53 80 ns Reverse recovery charge Q rr - 65 97 nC V R=120 V, I F=0.2 A, di F/dt =100 A/µs T A=25 °C Values V GS=-3 V, V DS=25 V, f =1 MHz V DD=120 V, V GS=-2...5 V, I D=0.2 A, R G=7.6 W V DD=192 V, I D=0.2 A, V GS=-3 to 5 V Rev. 1.42 page 3 2012-11-29

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 100 101 102 103 10-3 10-2 10-1 100 101 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 ZthJA [K/W] tp [s] 0.5 1.5 0 40 80 120 160 Ptot [W] TA [°C] 0.1 0.2 0.3 0.4 0 40 80 120 160 ID [A] TA [°C] Rev. 1.42 page 4 2012-11-29

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V RDS(on) [W] ID [A] 0.2 0.4 0.6 0.8 -2 -1 0 1 2 3 ID [A] VGS [V] 0.1 0.2 0.3 0.4 0.5 0.6 gfs [S] ID [A] -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 ID [A] VDS [V] Rev. 1.42 page 5 2012-11-29

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.025 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=108 µA parameter: I D 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 108 µA J K L M N 0.01 0.1 -2 -1.5 -1 -0.5 ID [mA] VGS [V] typ 98 % -60 -20 20 60 100 140 180 RDS(on) [W] Tj [°C] typ 98 % 2 % -2.5 -1.5 -0.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 0 10 20 30 C [pF] VDS [V] Rev. 1.42 page 6 2012-11-29

13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.2 A pulsed parameter: T j parameter: V DD

16 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=250 µA 200 240 280 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C]

0.2 VDS(max)

0.5 VDS(max)

0.8 VDS(max)

VGS [V] Qgate [nC] 25 °C 150 °C 0.01 0.1 0 0.5 1 1.5 2 IF [A] VSD [V] 150 °C, 98% Rev. 1.42 page 7 2012-11-29

Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.42 page 8 2012-11-29

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.42 page 9 2012-11-29

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