BSP123_10 INFINEON | Alldatasheet

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Technical content

Rev. 1.5 BSP123 SIPMOSÒ Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 6 Ω ID 0.37 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • dv/dt rated PG-SOT223 Marking BSP123 Type Package Tape and Reel Information BSP123 PG-SOT223 L6433: 4 000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.37 0.3 A Pulsed drain current TA=25°C ID puls 1.48 Reverse diode dv/dt IS=0.37A, VDS=80V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Class JESD22-A114-HBM 0 (<250V) Power dissipation TA=25°C Ptot 1.79 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Pb-free lead plating; RoHS compliant• BSP123BSP123 PG-SOT223 L6327: 1000 pcs/reel
  • Qualified according to AEC Q101 Packaging BSP123 Non dry Non dry

Rev. 1.5 BSP123 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - 15 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 100 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C IDSS 0.01 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - - 10 nA Drain-source on-state resistance VGS=2.8V, ID=15mA RDS(on) - 14 30 Ω Drain-source on-state resistance VGS=4.5V, ID=0.3A RDS(on) - 4.8 10 Drain-source on-state resistance VGS=10V, ID=0.37A RDS(on) - 3.5 6 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Rev. 1.5 BSP123 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2*ID*RDS(on)max, ID=0.3A 0.13 0.27 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 56 70 pF Output capacitance Coss - 9 11.3 Reverse transfer capacitance Crss - 3.5 4.4 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=0.37A, RG=6Ω - 3.3 5 ns Rise time tr - 3.2 4.8 Turn-off delay time td(off) - 8.7 13 Fall time tf - 9.4 14 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=0.37A - 0.09 0.13 nC Gate to drain charge Qgd - 0.8 1.2 Gate charge total Qg VDD=80V, ID=0.37A, VGS=0 to 10V - 1.6 2.4 Gate plateau voltage V(plateau) VDD=80V, ID = 0.37 A - 3.61 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.37 A Inv. diode direct current, pulsed ISM - - 1.48 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.9 1.2 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 52.7 79 ns Reverse recovery charge Qrr - 17.8 27 nC

Rev. 1.5 BSP123

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP123 Ptot

2 Drain current

ID = f (TA) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 A

0.4 BSP123

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A BSP123 ID R DS(on) V DS / I D DC tp = 21.0ms

4 Transient thermal impedance

ZthJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSP123 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev. 1.5 BSP123 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 A 0.7 ID 10V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID Ω RDS(on) 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C ID 0.05 0.1 0.15 0.2 0.25 0.3 S 0.4 gfs

Rev. 1.5 BSP123

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 0.37 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω BSP123 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS; ID =50µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 4 8 12 16 20 24 28 V 36 VDS 0 10 1 10 2 10 3 10 pF C Crss Ciss Coss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj VSD -2 10 -1 10 0 10 1 10 A BSP123 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Rev. 1.5 BSP123 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.37 A pulsed, Tj = 25 °C QG V BSP123 VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 100 102 104 106 108 110 112 114 V 120 BSP123 V(BR)DSS Rev. 1.5 BSP123

Rev. 1.5 BSP123 Page 8 2010-06-22 Footprint: Dimensions in mm

Rev. 1.5 BSP123 Published by Infineon Technologies AG

81726 Munich, Germany

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