BM30-12 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 36 V BVCEO IC = 50 mA 18 BVEBO IE = 5.0 mA 4.0 V Cob VCB = 12.5 V f = 1.0 MHz 110 pF POUT PIN ηC VCC = 12.5 V P OUT = 40 W f = 175 MHz 30 4.5 W W ZIN ZL POUT = 30 W f = 175 MHz 1.0 + j1.4 1.75 + j0.5 Ω Ω NPN SILICON RF POWER TRANSISTOR BM30-12 DESCRIPTION: The ASI BM30-12 is Designed for VHF land mobil applications in the 150- 175 MHZ range. FEATURES:
- Common Emitter
- POUT = 30 W at175 MHz
- Omnigold™ Metalization System
- Internal Matching network MAXIMUM RATINGS IC 8.0 A VCES 36 V VCEO 18 V VEBO 4.0 V PDISS 65 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 2.7 °C/W PACKAGE STYLE .500 6L FLG MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97 C B E E