BM100-28 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 50 mA 33 V BV CES IC = 100 mA 65 V BV EBO IE = 5.0 mA 4.0 V hFE VCE = 5.0 V IC = 1.0 A 10 --- C CB VVB = 28 V f = 1.0 MHz 200 pF PG ηηηηC VCC = 28 V POUT = 100 W f = 175 MHz8.5 dB NPN SILICON RF POWER TRANSISTOR BM100-28 PACKAGE STYLE .500 6L FLG 1 = COLLECTOR 2 = BASE 3&4 = EMITTER DESCRIPTION: The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz. FEATURES:
- Common Emitter
- PG = 8.5 dB at 20 W/175 MHz
- Omnigold ™ Metalization System MAXIMUM RATINGS IC 20 A VCEO 33 V VCES 65 V VEBO 4.0 V PDISS 270 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 0.65 O C/W