BLY93C ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change witout notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCES IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 36 V 4.0 mA hFE VCE = 5.0 V IC = 1.25 A 10 100 --- COB VCB = 28 V f = 1.0 MHz 45 pF GP fT VCE = 28 V f = 175 MHz VCB = 28 V IE = 200 mA f = 100 MHz 9.0 625 --- dB MHz NPN SILICON RF POWER TRANSISTOR BLY93C DESCRIPTION: The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES:

  • Common Emitter
  • PG = 9.0 dB at 25 W/175 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 3.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 70 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 2.5 °C/W PACKAGE STYLE .380 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 B E E C