BLY90 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 36 V BVCEO IC = 100 mA 18 BVEBO IE = 25 mA 4.0 V hFE VCE = 5.0 V IC = 1.0 A 10 200 --- Cc VCB = 15 V f = 1.0 MHz 130 160 pF fT VCE = 10 V IC = 6.0 A 550 MHz GP ηηηηC VCC = 12.5 V P OUT = 50 W f = 175 MHz 5.0 dB NPN SILICON RF POWER TRANSISTOR BLY90 DESCRIPTION: The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Applications up to 175 MHz. FEATURES:
- Common Emitter
- PG = 5.0 dB at 50 W/175 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 8.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V PDISS 130 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.35 °C/W PACKAGE STYLE .380 4L STUD MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B E E