BLX93A ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCES IC = 10 mA 65 V BVCEO IC = 25 mA 33 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V IC = 100 mA 10 --- FT VCE = 5.0 V IC = 200 mA 1.2 GHz Cc VCB = 10 V f = 1.0 MHz 14 pF Ce VEB = 0 V f = 1.0 MHz 60 pF PG ηηηηC VCE = 28 V P OUT = 7.0 W f = 470 MHz 8.5 9.0 dB NPN SILICON RF POWER TRANSISTOR BLX93A DESCRIPTION: The ASI BLX93A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V FEATURES:

  • High Gain - 9.0 dB
  • Omnigold™ Metallization System
  • Common Emitter MAXIMUM RATINGS IC 1.0 A VCB 65 V PDISS 12.5 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +150 °C θθθθJC 9.8 °C/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J EE B C