BLX65S ASI | Alldatasheet
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Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TA = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 50 mA 36 V BVEBO IE = 1.0 mA 2.5 V ICBO VCB = 15 V 1.0 mA hFE VCB = 5.0 V IC = 50 mA 20 200 --- COB VCB = 12.5 V f = 1.0 MHz 15 pF GPE ηηηηC VCE = 12.5 V POUT = 2.0 W f = 470 MHz 7.0 dB NPN SILICON HIGH FREQUENCY TRANSISTOR ASI BLX65S
DESCRIPTION
The ASI BLX65S is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency Range. FEATURES INCLUDE:
- Economical TO-39 Package
- 8 dB Typical Gain
- Emitter Ballasting MAXIMUM RATINGS IC 750 mA VCBO 36 V PDISS 5.0 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 35 O C / W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR (CASE)