BLW97 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 65 V BVCEO IC = 100 mA 33 V BVEBO IE = 20 mA 4.0 V ICES VCE = 33 V 20 mA hFE VCE = 5.0 V IC = 10 A 15 50 --- VCE(SAT) IC = 25 A IB = 5.0 A 2.4 V CC VCB = 28 V f = 1.0 MHz 380 pF GP IMD3 ηηηηC VCE = 28 V ICQ = 100 mA POUT = 175 W (PEP) 11.5 -30 dB dBc IMPEDANCE DATA FREQ. ZIN(Ω ) Z CL(Ω ) PIN(W) V CE(V) NPN SILICON RF POWER TRANSISTOR BLW97 DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz FEATURES:

  • PG = 11.5 dB min. at 175 W/30 MHz
  • IMD3 = -30 dBc max. at 175 W(PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 15 A VCESM 65 V VCEO 33 V VEBO 4.0 V PDISS 230 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.76 °C/W PACKAGE STYLE .500 4L FLG MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 E C E B