BLW96 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 110 V BVCEO IC = 200 mA 55 V BVEBO IE = 20 mA 4.0 V ICES VCE = 55 V 10 mA hFE VCE = 5.0 V IC = 7.0 A 15 50 --- VCE IC = 20 A IC = 4.0 A 1.9 V CC VCB = 50 V f = 1.0 MHz 280 pF GP IMD3 ηηηηC VCE = 50 V ICQ =100 mA POUT = 200 W(PEP) 13.5 -30 dB dBc NPN SILICON RF POWER TRANSISTOR BLW96 DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. FEATURES:

  • PG = 14 dB Typical at 200 W/28 MHz
  • IMD3 = -32 dBc Typ. at 220 W(PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 12 A VEES 110 V VCEO 55 V VEBO 4.0 V PDISS 320 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθθθJC 0.7 OC/W PACKAGE STYLE .500 4L FLG ORDER CODE: ASI10826 MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 E E C B