BLW83 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 10 mA 65 V BVCEO IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 36 V 5 mA hFE VCE = 5.0 V IC = 1.25 A 10 100 --- Cob VCB = 12.5 V f = 1.0 MHz 100 pF GPE IMD3 VCC = 26 V I CQ = 25 mA f = 30 MHz POUT = 10 W(PEP) 20 21 -30 --- dB dB NPN SILICON RF POWER TRANSISTOR BLW83 DESCRIPTION: The ASI BLW83 is Designed for use in transmitting amplifiers operatimg in applications as linear amplifier in class-A and AB. FEATURES:

  • PG = 20 dB min. at 10 W/30 MHz
  • IMD3 = -30 dBc max. at 10 W(PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 3.0 A VCES 65 V VCEO 36 V VEBO 4.0 V PDISS 80 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 2.2 °C/W PACKAGE STYLE .380 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 E EC B