BLW80 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV 0

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 17 V BVCES IC = 10 mA VBE = 0 V 36 V BVEBO IE = 4.0 mA 4 V ICES VCE = 17 V 4.0 mA hFE VCE = 5 V IC = 5.0 A 10 35 --- VCE IC = 1.5 A IB = 300 mA 0.75 V CC VCB = 12.5 V F = 1. 0 MHz 14 pF PG ηηηη VCE = 12.5 V POUT = 4.0 W F = 470 MHz 8.0 DB NPN SILICON RF POWER TRANSISTOR BLW80 DESCRIPTION: The ASI BLW80 is Designed for Class A,B or C UHF & VHF Communication applications up to 470 MHz. FEATURES:

  • PG = 8.0 dB Typical at 470 MHz
  • ••• Omnigold™ Metallization System MAXIMUM RATINGS IC 1.0 A VCES 36 V PDISS 17 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 10.3 °C/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J EE B C